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Showing items 1-10 of 18 (2 Page(s) Totally)
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| 臺大學術典藏 |
2021-06-22T02:00:30Z |
Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
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Cheng, Y.-T.;Wan, H.-W.;Cheng, C.-K.;Cheng, C.-P.;Kwo, J.R.;Hong, M.;Pi, T.-W.; Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.R.; Hong, M.; Pi, T.-W.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2020-03-31T08:25:21Z |
The status of the women physicists and working group activities in China-Taipei
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Tai, M. F.; Cheng, C.; Lin, J. G.; Tsai, L. L.; Ho, M. S.; Kao, F. J.; Wu, M. K.; Kwo, J. R. |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics
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Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
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MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
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MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Nanometer-thick single-crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology
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Chang, W.H.;Lee, C.H.;Chang, Y.C.;Chang, P.;Huang, M.L.;Lee, Y.J.;Hsu, C.-H.;Hong, J.M.;Tsai, C.C.;Kwo, J.R.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Nanometer-thick single-crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology
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Chang, W.H.;Lee, C.H.;Chang, Y.C.;Chang, P.;Huang, M.L.;Lee, Y.J.;Hsu, C.-H.;Hong, J.M.;Tsai, C.C.;Kwo, J.R.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Achieving a low interfacial density of states with a flat distribution in high-K Ga2O3(Gd2O3) directly deposited on Ge
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Lin, C.;Lin, H.;Chiang, T.;Chu, R.;Chu, L.;Lin, T.;Chang, Y.;Wang, W.-E.;Kwo, J.R.;Hong, M.; Lin, C.; Lin, H.; Chiang, T.; Chu, R.; Chu, L.; Lin, T.; Chang, Y.; Wang, W.-E.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Achieving a low interfacial density of states with a flat distribution in high-K Ga2O3(Gd2O3) directly deposited on Ge
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Lin, C.;Lin, H.;Chiang, T.;Chu, R.;Chu, L.;Lin, T.;Chang, Y.;Wang, W.-E.;Kwo, J.R.;Hong, M.; Lin, C.; Lin, H.; Chiang, T.; Chu, R.; Chu, L.; Lin, T.; Chang, Y.; Wang, W.-E.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Metal oxide semiconductor device studies of molecular-beam-deposited Al 2O 3/InP heterostructures with various surface orientations (001), (110), and (111)
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Chu, L.-K.; Merckling, C.; Dekoster, J.; Kwo, J.R.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG |
Showing items 1-10 of 18 (2 Page(s) Totally)
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