|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"kwo jueinai"
Showing items 11-20 of 21 (3 Page(s) Totally) << < 1 2 3 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2
|
Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen;Chiu, Han-Chin;Lin, Tsung-Da;Huang, Mao-Lin;Chang, Wen-Hsin;Wu, Shao-Yun;Wu, Kang-Hua;Hong, Minghwei;Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:09Z |
利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究
|
Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate
|
Hong, Ming-Hwei; Kwo, Jueinai; Chen, Chih-Ping; Chang, Shiang-Pi; Lee, Wei-Chin; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
Advanced High K Dielectrics for Nano Electronics-Science and Technologies
|
Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 國立臺灣大學 |
2012 |
Surface-Atom Core-Level Shift in GaAs(111)A-2x2
|
Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2012 |
Surface-Atom Core-Level Shift in GaAs(111)A-2x2
|
Kwo, Jueinai; Hong, Minghwei; Wertheim, Gunther K.; Chiang, Tsung-Hung; Huang, Mao-Lin; Chen, Bor-Rong; Pi, Tun-Wen; Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2012 |
Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2
|
Pi, Tun-Wen;Chen, Bor-Rong;Huang, Mao-Lin;Chiang, Tsung-Hung;K. Wertheim, Gunther;Hong, Minghwei;Kwo, Jueinai; Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; K. Wertheim, Gunther; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal--Oxide--Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
Showing items 11-20 of 21 (3 Page(s) Totally) << < 1 2 3 > >> View [10|25|50] records per page
|