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Institution Date Title Author
國立交通大學 2014-12-08T15:41:21Z A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB
國立交通大學 2014-12-08T15:40:57Z High-density MIM canpacitors using AlTaOx dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:40:57Z Fully silicided NiSi gate on La2O3 MOSFETs Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:40:49Z PVD HfO2 for high-precision MIM capacitor applications Kim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:40:40Z Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors Kim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:40:20Z High-performance microwave coplanar bandpass and bandstop filters on Si substrates Chan, KT; Chin, A; Li, MF; Kwong, DL; McAlister, SP; Duh, DS; Lin, WJ; Chang, CY
國立交通大學 2014-12-08T15:40:17Z Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:40:09Z Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process Chan, KT; Chin, A; Lin, YD; Chang, CY; Zhu, CX; Li, MF; Kwong, DL; McAlister, S; Duh, DS; Lin, WJ
國立交通大學 2014-12-08T15:40:03Z High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:40:03Z Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL

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