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Taiwan Academic Institutional Repository >
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"kwong dl"
Showing items 11-20 of 30 (3 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:51Z |
Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
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Lin, CY; Chin, A; Hou, YT; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:32Z |
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
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Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
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Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
| 國立交通大學 |
2014-12-08T15:39:00Z |
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
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Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:45Z |
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
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Zhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:36Z |
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
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Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
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Low, T; Li, MF; Shen, C; Yeo, YC; Hou, YT; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
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Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
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Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
Showing items 11-20 of 30 (3 Page(s) Totally)
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