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Institution Date Title Author
國立交通大學 2014-12-08T15:37:19Z Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:34:48Z Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate Zhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:26:18Z Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學 2014-12-08T15:26:18Z RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:26:09Z High density RF MIM capacitors using high-kappa AlTaOx dielectrics Huang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:26:09Z Microwave coplanar filters on Si substrates Chan, KT; Chin, A; Kuo, JT; Chang, CY; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:25:55Z High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology Chin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL
國立交通大學 2014-12-08T15:25:47Z A tunable and program-erasable capacitor on Si with excellent tuning memory Lai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:25:43Z 3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:19:37Z A novel program-erasable high-(K) A1N-Si MIS capacitor Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL

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