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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2018-09-10T09:50:18Z Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:24:40Z Structural properties of GaAsSb grown on GaAs Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:24:39Z Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:00Z Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:00Z Orentation dependent phase separation in GaAsSb Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:00Z Structural properties of (111)B GaAsSb grown on GaAs substrates Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:50Z The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:16Z The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells J. M. Lin,;L. C. Chou,;H. H. Lin; J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:07:58Z Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:45Z Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy L. C. Chou; H. H. Lin; HAO-HSIUNG LIN

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