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Institution Date Title Author
臺大學術典藏 2021-08-03T00:39:55Z Identifying Performance-Limiting Deep Traps in Ta3N5 for Solar Water Splitting J. Fu; F. Wang; Y. Xiao; Y. Yao; C. Feng; L. Chang; C.-M. Jiang; V. F. Kunzelmann; Z. M. Wang; A. O. Govorov; I. D. Sharp; Y. Li; CHANG-MING JIANG
元智大學 2011-07 Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE Fang-I Lai; S. Y. Kuo; W. C. Chen; W. T. Lin; W. L. Wang; L. Chang; C. N. Hsiao; C. H. Chiang
國立中山大學 2009 The influence of interface modifier on the performance of nanostructured ZnO/polymer hybrid solar cells Y.Y. Lin;Y.Y. Lee;L. Chang;J.J. Wu;C.W. Chen
國立中山大學 2009 Growth behavior and microstructure of ZnO epilayer on γ-LiAlO2(100) substrate by chemical vapor deposition L. Chang;M.M.C. Chou;T.H. Hwang;C.W. Chen
國立中山大學 2009 Growth behavior of nonpolar GaN on the nearly lattice-matched (100) g-LiAlO2 substrate by chemical vapor deposition M.M.C. Chou;L. Chang;C.H. Chen;W.F. Yang;C.H.A. Li;J.J. Wu
國立中山大學 2009 Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE D.R. Hang;M.M.C. Chou;L. Chang;Y. Dikme;M. Heuken
國立東華大學 2008 Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots 祁錦雲; Jim-Yong Chi;J. F. Chen;C. H. Chiang; Y. H. Wu; L. Chang
國立東華大學 2008 Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation 祁錦雲; Jim-Yong Chi;J. F. Chen; C. H. Yang; Y. H. Wu; L. Chang
中原大學 2007-08-07 Relaxation-induced Lattice Misfits and Their Effects on the Emission Properties of InAs Quantum Dots J. F. Chen;Y. Z. Wang;C. H. Chiang;R. S. Hsiao;Y. H. Wu;L. Chang;J. S. Wang;T. W. Chi;J. Y. Chi
元智大學 2007-02 Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT 許恒通; L.H. Chu; E. Y. Chang; L. Chang; Y. H. Wu; S. H. Chen; T. L. Lee; Y. C. Lien; C. Y. Chang

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