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Institution Date Title Author
臺大學術典藏 2018-09-10T04:58:47Z Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
國立中山大學 2005 Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x ? 3% grown by molecular beam epitaxy T.S. Lay;E.Y. Lin;C.Y. Chang;K.M. Kong;L.P. Chen;T.Y. Chang;J.S. Wang;G. Lin;J.Y. Chi
國立中山大學 2004 High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy J.S. Wang;A.R. Kovsh;R.S. Hsiao;L.P. Chen;J.F. Chen;T.S. Lay;J.Y. Chi
國立中山大學 2004 Probing the Electronic Structures of III-V-Nitride Semiconductors by X-ray Photoelectron Spectroscopy T.S. Lay;W.T. Kuo;L.P. Chen;Y.H. Lai;W.H. Hung;J.S. Wang;J.Y. Chi;D.K. Shih;H.H. Lin
國立東華大學 2003-12 Long-Wavelength Ridge-Waveguide InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy 祁錦雲; Jim-Yong Chi; J. S. Wang;A. R. Kovsh; R. S. Hsiao; G. Lin; D. A. Livshits; I. F. Chen; Y. T. Wu; L. P. Chen; J. F. Chen; J. Y. Chi
國立東華大學 2003-09 Probing the electronic structure of III-V-Nitride semiconductors by X-ray photoelectron spectroscopy 祁錦雲; Jim-Yong Chi; T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; W. H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; H. H. Lin; C. M. Chuang; K. H. Chen
國立東華大學 2003-06-23 High-performance Ridge-waveguide Multi-stack (N=2, 5 and 10) InAs/InGaAs/GaAs Quantum Dot Lasers of 1.3 m range 祁錦雲; Jim-Yong Chi; A.R.Kovsh; J.S.Wang; R.S.Hsiao; L.P.Chen; D.A.Livshits; G.Lin; J.Y.Chi; V.M.Ustinov
國立東華大學 2002 Investigation and fabrication of 1.3 um InAs quantum dot resonant cavity light emitting diodes 祁錦雲; Jim-Yong Chi; H. C. Tu; S. J. Chang; Y. K. Su; J. S. Wang; A. R. Kovsh; Y. T. Wu; K. F. Lin; R. S. Shiao; L. P. Chen; C. Y. Huang; W. J. Jiang; C. P. Sung; J. Y. Chi
國立中山大學 1984 Growth Mechanisms of the GaAs LPMOCVD Growth C.Y. Chang;M.K. Lee;Y.K. Su;Y.C. Chou;L.P. Chen

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