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"lai chao sung"的相关文件
显示项目 21-32 / 32 (共1页)
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| 國立交通大學 |
2014-12-08T15:12:56Z |
Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:12:55Z |
Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory
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Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Current transport mechanism for HfO2 gate dielectrics with fluorine incorporation
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Wu, Woei Cherng; Lai, Chao Sung; Wang, Tzu Ming; Wang, Jer Chyi; Hsu, Chih Wei; Ma, Ming Wen; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:11:13Z |
Carrier transportation mechanism of the TaN/HfO(2)/IL/Si structure with silicon surface fluorine implantation
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Wu, Woei Cherng; Lai, Chao-Sung; Wang, Tzu-Ming; Wang, Jer-Chyi; Hsu, Chih Wei; Ma, Ming Wen; Lo, Wen-Cheng; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFET
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:07:34Z |
Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; Ho, Yi-Hsun |
| 國立交通大學 |
2014-12-08T15:02:15Z |
The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory
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Wang, Kuan-Ti; Chao, Tien-Sheng; Wu, Woei-Cherng; Lai, Chao-Sung |
| 國立成功大學 |
2012-06-30 |
Microstructural effect of gadolinium oxide nanocrystals upon annealing on electrical properties of memory devices
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Huang, Michael R. S.; Liu, Chuan-Pu; Wang, Jer-Chyi; Chen, Yu-Kai; Lai, Chao-Sung; Fang, Yu-Ching; Shu, Li |
| 國立臺灣大學 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 臺大學術典藏 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Yang, Jer-Ren et al.; Banerjee, Writam; Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 東海大學 |
2010 |
離子感測器EIS之積體化量測系統(I)
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黃宇中,賴朝松; Huang, Yu-Chung; Lai, Chao-Sung |
| 國立成功大學 |
2009 |
Characteristics of Gadolinium Oxide Nanocrystal Memory with Optimized Rapid Thermal Annealing
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Wang, Jer-Chyi; Lai, Chao-Sung; Chen, Yu-Kai; Lin, Chih-Ting; Liu, Chuan-Pu; Huang, Michael R. S.; Fang, Yu-Ching |
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