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Taiwan Academic Institutional Repository >
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"lai cs"
Showing items 11-20 of 65 (7 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:51Z |
The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology
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Chung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:27Z |
A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
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Chung, SS; Liu, YR; Yeh, CF; Wu, SR; Lai, CS; Chang, TY; Ho, JH; Liu, CY; Huang, CT; Tsai, CT; Shiau, WT; Sun, SW |
| 國立交通大學 |
2014-12-08T15:25:11Z |
A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineering
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Chung, SS; Liu, YR; Wu, SJ; Lai, CS; Liu, YC; Chen, DF; Lin, HS; Shiau, WT; Tsai, CT; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Effects of post CF(4) plasma treatment on the HfO(2) thin film
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Lai, CS; Wu, WC; Fan, KM; Wang, JC; Lin, SJ |
| 國立交通大學 |
2014-12-08T15:19:05Z |
Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
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Lai, CS; Wu, WC; Wang, JC; Chao, T |
| 國立交通大學 |
2014-12-08T15:17:51Z |
Oxide grown on polycrystal silicon by rapid thermal oxidation in N2O
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Kao, CH; Lai, CS; Lee, CL |
| 國立交通大學 |
2014-12-08T15:17:09Z |
Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stack
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Chung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:16:56Z |
Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealing
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Lai, CS; Wu, WC; Wang, JC; Cha, TS |
| 國立交通大學 |
2014-12-08T15:03:13Z |
THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
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LAI, CS; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:06Z |
POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
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LAI, CS; LEI, TF; LEE, CL; CHAO, TS |
Showing items 11-20 of 65 (7 Page(s) Totally)
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