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"lai fi"的相关文件
显示项目 11-28 / 28 (共2页)
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| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
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Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
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Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O
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Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers
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Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
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Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:30Z |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
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Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:28Z |
Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
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Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
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Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
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Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
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Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
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Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
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Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
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Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Ultraviolet lasing of sol-gel-derived zinc oxide polycrystalline films
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Kuo, SY; Lai, FI; Chen, WC; Cheng, CP; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:47Z |
Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristics
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Lai, FI; Kuo, SY; Chang, YH; Huang, HW; Chang, CW; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:39Z |
Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy
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Kuo, SY; Kei, CC; Hsiao, CN; Chao, CK; Lai, FI; Kuo, HC; Hsieh, WF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:35Z |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
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Lai, FI; Kuo, SY; Wang, JS; Hsiao, RS; Kuo, HC; Chi, J; Wang, SC; Wang, HS; Liang, CT; Chen, YF |
显示项目 11-28 / 28 (共2页)
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