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"lai fi"的相关文件
显示项目 21-28 / 28 (共2页)
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| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
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Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
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Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
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Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Ultraviolet lasing of sol-gel-derived zinc oxide polycrystalline films
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Kuo, SY; Lai, FI; Chen, WC; Cheng, CP; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:47Z |
Fabrication of magnesium-doped gallium nitride nanorods and microphotoluminescence characteristics
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Lai, FI; Kuo, SY; Chang, YH; Huang, HW; Chang, CW; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:39Z |
Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy
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Kuo, SY; Kei, CC; Hsiao, CN; Chao, CK; Lai, FI; Kuo, HC; Hsieh, WF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:35Z |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
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Lai, FI; Kuo, SY; Wang, JS; Hsiao, RS; Kuo, HC; Chi, J; Wang, SC; Wang, HS; Liang, CT; Chen, YF |
显示项目 21-28 / 28 (共2页)
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