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"lai po hsien"的相关文件
显示项目 1-25 / 38 (共2页)
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| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-07-16 |
On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance
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Hung, Ching-Wen; Lin, Kun-Wei; Liu, Rong-Chau; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Su-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Comprehensive investigation of hydrogen-sensing properties of Pt/InAIP-based Schottky diodes
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chang, Hung-Chi; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Three-terminal-controlled field-effect resistive hydrogen sensor
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Hung, Ching-Wen; Lin, Kun-Wei; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I.; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-25 |
異質結構場效電晶體之表面披覆效應與熱穩定度之研究
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賴柏憲; Lai, Po-Hsien |
| 國立成功大學 |
2007-06-25 |
異質結構場效電晶體之表面披覆效應與熱穩定度之研究
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賴柏憲; Lai, Po-Hsien |
| 國立成功大學 |
2007-05 |
Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals
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Lai, Po-Hsien; Fu, SSu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Huang, Yi-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor
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Hung, Ching-Wen; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, SSu-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-03-08 |
Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2007-01-10 |
Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers
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Tsai, Yan-Ying; Cheng, Chin-Chuan; Lai, Po-Hsien; Fu, Ssu-I; Hong, Ching-Wen; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-01 |
On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance
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Fu, Ssu-I; Chen, Tzu-Pin; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-12-25 |
Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
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Lai, Po-Hsien; Fu, Ssu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Further suppression of surface-recombination of an InGaP/GaAs HBT by conformal passivation
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs
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Cheng, Shiou-Ying; Fu, Ssu-I; Chen, Tzu-Pin; Lai, Po-Hsien; Liu, Rong-Chau; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2006-11 |
Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-15 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
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Fu, Ssu-I.; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
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Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuei-Yi; Lai, Po-Hsien; Chen, Li-Yang; Liu, Wen-Chau; Chiang, Meng-Hsueh |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
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Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
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