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"lai po hsien"的相关文件
显示项目 21-38 / 38 (共1页)
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| 國立成功大學 |
2006-09-15 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
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Fu, Ssu-I.; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
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Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuei-Yi; Lai, Po-Hsien; Chen, Li-Yang; Liu, Wen-Chau; Chiang, Meng-Hsueh |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
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Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
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Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-02 |
AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-01 |
Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
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Lai, Po-Hsien; Chen, Chun-Wei; Kao, Chung-I; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure
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Lai, Po-Hsien; Chuang, Hung-Ming; Tsai, Sheng-Fu; Kao, Chung-I; Chen, Horng-Rung; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-06-05 |
砷化銦鎵通道異質結構場效電晶體之研製
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賴柏憲; Lai, Po-Hsien |
| 國立成功大學 |
2004-06-05 |
砷化銦鎵通道異質結構場效電晶體之研製
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賴柏憲; Lai, Po-Hsien |
| 國立成功大學 |
2004-03 |
Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Chen, Chun-Yuan; Liao, Xin-Da; Lai, Po-Hsien; Kao, Chung-I; Liu, Wen-Chau |
| 國立成功大學 |
2004-01 |
Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Lai, Po-Hsien; Liao, Xin-Da; Chen, Chun-Yuan; Yen, Chih-Hung; Liu, Rong-Chau; Liu, Wen-Chau |
显示项目 21-38 / 38 (共1页)
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