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"lai w c"的相關文件
顯示項目 246-270 / 290 (共12頁)
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| 國立成功大學 |
2006-01 |
Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications
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Shi, Jin-Wei; Huang, H. Y.; Sheu, Jinn-Kong; Hsieh, S. H.; Wu, Y. S.; Lu, J. Y.; Huang, F. H.; Lai, W. C. |
| 國立臺灣大學 |
2006 |
Formation and properties of stannate conversion coatings on AZ61 magnesium alloys
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Lin, C.S.; Lin, H.C.; Lin, K.M.; Lai, W.C. |
| 國立臺灣大學 |
2006 |
Essential oil from the leaves of Cryptomeria japonica acts as a silverfish (Lepisma saccharina) repellent and insecticide
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Wang, S. Y.; Lai, W. C.; Chu, F. H.; Lin, C. T.; Shen, S. Y.; Chang, S. T. |
| 國立成功大學 |
2005-10 |
Nitride-based light-emitting diodes with p-AlInGaN surface layers
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Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T. |
| 國立成功大學 |
2005-08 |
InGaN-GaN MQW LEDs with Si treatment
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, S. C.; Tsai, J. M.; Lai, W. C.; Kuo, Chih-Hung; Chang, C. S. |
| 國立臺灣大學 |
2005-05 |
Composite Moment Frame – Full Scale Testing Confirms Seismic Performance
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Deierlein, G. G.; Cordova, P.; Tsai, K.C.; Chen, C.H.; Lai, W.C. |
| 國立成功大學 |
2005 |
Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors
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Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J. |
| 國立成功大學 |
2005 |
Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer
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�Sheu, �Jinn-Kong; Lee, M. L.; Lai, W. C.; Tseng, H. C.; Chi, G. C. |
| 國立成功大學 |
2005 |
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase
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�Sheu, �Jinn-Kong; Chen, S. S.; Lee, M. L.; Lai, W. C.; Chang, W. H.; Chi, G. C. |
| 國立成功大學 |
2004-10 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
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Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-09 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, W. C.; Chi, Gou-Chung |
| 國立成功大學 |
2004-04 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-03-01 |
InGaN/GaN multi-quantum dot light-emitting diodes
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Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H. |
| 國立成功大學 |
2004-03 |
Nitride-based LEDs with textured side walls
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M. |
| 國立成功大學 |
2004-01-15 |
Nitride-based near-ultraviolet LEDs with an ITO transparent contact
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Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M. |
| 國立成功大學 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers
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Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T |
| 臺大學術典藏 |
2004 |
Study of the miscibility and crystallization behavior of poly(ethylene oxide)/poly(vinyl alcohol) blends
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Lai, W.-C.; Liau, W.-B.; WEN-BIN LIAU |
| 國立成功大學 |
2003-11 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-11 |
Nitride-based blue LEDs with GaN/SiN double buffer layers
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Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C. |
| 國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-06-26 |
Gigantic jets between a thundercloud and the ionosphere
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Su, Han-Tzong; Hsu, R. R.; Chen, A. B.; Wang, Y. C.; Hsiao, W. S.; Lai, W. C.; Lee, Lou-Chuang; Sato, M.; Fukunishi, H. |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
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Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
顯示項目 246-270 / 290 (共12頁)
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