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Institution	Date	Title	Author
國立成功大學	2012-03-12	Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation	Liu, Shu-Yen; Sheu, J. K.; Lee, M. L.; Lin, Yu-Chuan; Tu, S. J.; Huang, F. W.; Lai, W. C.
國立臺灣科技大學	2012	1MS/s low power successive approximations register ADC for 67-fJ/conversion-step	Lai, W.-C.;Huang, J.-F.;Lin, W.-J.
國立臺灣科技大學	2012	A 100 MHz Gm-C bandpass filter chip design for wireless application	Huang, J.-F.;Lai, W.-C.;Lai, Y.-C.
國立臺灣科技大學	2012	Chip design of 5.1~6 GHz colpitts QVCO for WIMAX	Huang, J.-F.;Lai, W.-C.;Lin, Y.-J.
國立臺灣科技大學	2012	Chip design of a 5.8-GHz fractional-N frequency synthesizer with a tunable G m-C loop filter	Huang, J.-F.;Liu, R.-Y.;Lai, W.-C.;Shin, C.-W.;Hsu, C.-M.
國立臺灣科技大學	2012	An evaluation of Mahalanobis Distance and grey relational analysis for crack pattern in concrete structures	Lai, W.-C.;Chang, T.-P.;Wang, J.-J.;Kan, C.-W.;Chen, W.-W.
國立臺灣科技大學	2012	The 12MHz switched capacitor low-pass filter chip design for WiMAX applications	Huang, J.-F.;Lai, W.-C.;Huang, K.-J.;Liu, R.-Y.
國立成功大學	2011-11	Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts	Liu, Shu-Yen; Lin, Yu-Chuan; Ye, Jhao-Cheng; Tu, S. J.; Huang, F. W.; Lee, M. L.; Lai, W. C.; Sheu, J. K.
國立成功大學	2011-11	GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer	Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L.
國立成功大學	2011-10	Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers	Sheu, J. K.; Tu, S. J.; Lee, M. L.; Yeh, Y. H.; Yang, C. C.; Huang, F. W.; Lai, W. C.; Chen, C. W.; Chi, G. C.
國立成功大學	2011-09-15	GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth	Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M.
國立成功大學	2011-08	GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching	Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J.
國立成功大學	2011-04	Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates	Yang, C. C.; Sheu, J. K.; Kuo, C. H.; Huang, M. S.; Tu, S. J.; Huang, F. W.; Lee, M. L.; Yeh, Yu-Hsiang; Liang, X. W.; Lai, W. C.
國立成功大學	2011-02	Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique	Shi, Jin-Wei; Huang, H-W; Kuo, F-M; Lai, W-C; Lee, Ming-Lun; Sheu, Jinn-Kong
實踐大學	2011	GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer	Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L.
實踐大學	2011	GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer	Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L.
國立臺灣科技大學	2011	Cooperative Learning in Engineering Education: a Game Theory-Based Approach	Huang, H.C.;Shih, S.G.;Lai, W.C.
國立臺灣科技大學	2011	1.5-V 6-10 GHz Broadband CMOS LNA and Transmitting Amplifier for DS-UWB Radio	Huang, J.F.;Chuang, H.R.;Lai, W.C.
國立成功大學	2011	GaN MSM UV Photodetectors with an Al(0.82)In(0.18)N Intermediate Layer	Huang, Z. D.; Weng, W. Y.; Chang, S. J.; Chiu, C. J.; Hsueh, T. J.; Lai, W. C.; Wu, S. L.
國立成功大學	2011	GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer	Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S. L.
國立臺灣大學	2011	otational positioning system adapted to atomic force microscope for measuring anisotropic surface properties	Liao, H.-S.; Juang, B.-J.; Chang, W.-C.; Lai, W.-C.; Huang, K.-Y.; Chang, C.-S.
臺大學術典藏	2011	otational positioning system adapted to atomic force microscope for measuring anisotropic surface properties	HuangKY; LiaoHS; Chang, C.-S.; Huang, K.-Y.; Lai, W.-C.; Chang, W.-C.; Juang, B.-J.; Liao, H.-S.; Liao, H.-S.; Juang, B.-J.; Chang, W.-C.; Lai, W.-C.; Huang, K.-Y.; Chang, C.-S.
國立成功大學	2009-07	GaN-Based Power Flip-Chip LEDs With Cu Submount	Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Shen, C. F.; Ko, T. K.; Tsai, J. M.; Lai, W. C.; Sheu, Jinn-Kong; Lin, A. J.; Hung, S. C.
國立成功大學	2009-06-18	AlInN resistive ammonia gas sensors	Weng, W. Y.; Chang, Shoou-Jinn; Hsueh, T. J.; Hsu, C. L.; Li, M. J.; Lai, W. C.
國立成功大學	2009-04-15	GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer	Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C.
實踐大學	2009	GaN-Based Power Flip-Chip LEDs With Cu Submount	Chang, S.J.;Chen, W.S.;Shei, S.C.;Shen, C.F.;Ko, T.K.;Tsai, J.M.;Lai, W.C.;Sheu, J.K.;Lin, A.J.;Hung, S.C.
實踐大學	2009	GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer	Weng, W.Y.;Chang, S.J.;Lai, W.C.;Hsueh, T.J.;Shei, S.C.;Zeng, X.F.;Wu, S.L.;Hung, S.C.
國立成功大學	2009	GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes	Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.
國立成功大學	2009	Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte	Liu, Shu-Yen; �Sheu, �Jinn-Kong; Tseng, Chun-Kai; Ye, Jhao-Cheng; Chang, K. H.; Lee, M. L.; Lai, W. C.
朝陽科技大學	2008-11-19	A Genetic-Based Multi-User Detector for Multi-Carrier CDMA Communication Systems	黃永發; Ding, Y.; Tan, T.-H.; Lai, W.-C.; Wang, N.-C.
國立成功大學	2008-07	Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs	Jang, Chung-Hsun; Sheu, Jinn-Kong; Tsai, C. M.; Shei, Shih-Chang; Lai, W. C.; Chang, Shoou-Jinn
國立臺灣大學	2008-02	High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures	Shi, J.-W.; Sheu, J.-K.; Chen, C.-H.; Lin, G.-R.; Lai, W.-C.
亞洲大學	2008	Fruit rot disease of pineapple caused by Burkholderia gladioli.	Hseu, S. H.;Zeng, W. F.;Lai, W. C.;Pan, Y. P.;Lin, C. Y.
國立成功大學	2008	The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers	Lai, W. C.; Huang, Y. S.; Yen, Y. W.; �Sheu, �Jinn-Kong; Hsueh, T. H.; �Kuo,� C. H.; �Chang,� Shoou-Jinn
國立成功大學	2008	Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams	Wu, S. E.; Hsueh, T. H.; Liu, C. P.; �Sheu, �Jinn-Kong; Lai, W. C.; �Chang,� Shoou-Jinn
國立臺灣大學	2008	High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures	Shi, J.-W.; Sheu, J.-K.; Chen, C.-H.; Lin, G.-R.; Lai, W.-C.
國立成功大學	2007-11	Highly reliable high-brightness GaN-based flip chip LEDs	Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Ko, T. K.; Shen, C. F.; Hsu, Y. P.; Chang, C. S.; Tsai, J. M.; Lai, W. C.; Lin, A. J.
國立成功大學	2007-10-22	High responsivity of GaN p-i-n photodiode by using low-temperature interlayer	Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, Wen-Ray; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.
國立成功大學	2007-09	Linear cascade arrays of GaN-based green light-emitting diodes for high-speed and high-power performance	Shi, Jin-Wei; Sheu, Jinn-Kong; Wang, C. K.; Chen, C. C.; Hsieh, C. H.; Chyi, J. I.; Lai, W. C.
國立成功大學	2007-04-15	AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates	Chang, Shoou-Jinn; Ko, T. K.; Sheu, Jinn-Kong; Shei, Shih-Chang; Lai, W. C.; Chiou, Y. Z.; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Shen, C. F.
國立成功大學	2007-01	MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications	Cheng, A. T.; Su, Yan-Kuin; Lai, W. C.
國立成功大學	2007-01	DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD	Cheng, A. T.; Su, Yan-Kuin; Lai, W. C.; Huang, C. H.
亞洲大學	2007	Occurrence of bacterial leaf spot of betel palm caused by Burkholderia andropogonis and inhibition of bacterial by agrochemicals.	Hseu, S. H.;Lai, W. C.;Pan, Y. P.;Lin C. Y.
國立成功大學	2007	Nitride-based dual-stage MQW LEDs	Chang, Shoou-Jinn; Wei, S. C.; Su, Yan-Kuin; Lai, W. C.
國立成功大學	2006-08	Nitride-based flip-chip p-i-n photodiodes	Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F.
國立成功大學	2006-08	Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors	Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Wang, C. K.; Sheu, Jinn-Kong; Lai, W. C.
國立成功大學	2006-06	High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD	Tsai, C. M.; Sheu, Jinn-Kong; Wang, P. T.; Lai, W. C.; Shei, Shih-Chang; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Yan-Kuin
國立成功大學	2006-04	GaN-based p-i-n sensors with ITO contacts	Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.
國立成功大學	2006-03-13	InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface	Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C.
國立成功大學	2006-01	Rapid thermal annealed InGaN/GaN flip-chip LEDs	Chen, W. S.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Lai, W. C.; Kuo, C. H.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.

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