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Taiwan Academic Institutional Repository >
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"lai w c"
Showing items 206-215 of 290 (29 Page(s) Totally)
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| 國立成功大學 |
2011-09-15 |
GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth
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Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M. |
| 國立成功大學 |
2011-08 |
GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching
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Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J. |
| 國立成功大學 |
2011-04 |
Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates
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Yang, C. C.; Sheu, J. K.; Kuo, C. H.; Huang, M. S.; Tu, S. J.; Huang, F. W.; Lee, M. L.; Yeh, Yu-Hsiang; Liang, X. W.; Lai, W. C. |
| 國立成功大學 |
2011-02 |
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique
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Shi, Jin-Wei; Huang, H-W; Kuo, F-M; Lai, W-C; Lee, Ming-Lun; Sheu, Jinn-Kong |
| 實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 國立臺灣科技大學 |
2011 |
Cooperative Learning in Engineering Education: a Game Theory-Based Approach
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Huang, H.C.;Shih, S.G.;Lai, W.C. |
| 國立臺灣科技大學 |
2011 |
1.5-V 6-10 GHz Broadband CMOS LNA and Transmitting Amplifier for DS-UWB Radio
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Huang, J.F.;Chuang, H.R.;Lai, W.C. |
| 國立成功大學 |
2011 |
GaN MSM UV Photodetectors with an Al(0.82)In(0.18)N Intermediate Layer
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Huang, Z. D.; Weng, W. Y.; Chang, S. J.; Chiu, C. J.; Hsueh, T. J.; Lai, W. C.; Wu, S. L. |
| 國立成功大學 |
2011 |
GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S. L. |
Showing items 206-215 of 290 (29 Page(s) Totally)
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