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Showing items 236-285 of 290 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
| 國立成功大學 |
2007-01 |
MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications
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Cheng, A. T.; Su, Yan-Kuin; Lai, W. C. |
| 國立成功大學 |
2007-01 |
DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD
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Cheng, A. T.; Su, Yan-Kuin; Lai, W. C.; Huang, C. H. |
| 亞洲大學 |
2007 |
Occurrence of bacterial leaf spot of betel palm caused by Burkholderia andropogonis and inhibition of bacterial by agrochemicals.
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Hseu, S. H.;Lai, W. C.;Pan, Y. P.;Lin C. Y. |
| 國立成功大學 |
2007 |
Nitride-based dual-stage MQW LEDs
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Chang, Shoou-Jinn; Wei, S. C.; Su, Yan-Kuin; Lai, W. C. |
| 國立成功大學 |
2006-08 |
Nitride-based flip-chip p-i-n photodiodes
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Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F. |
| 國立成功大學 |
2006-08 |
Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors
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Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Wang, C. K.; Sheu, Jinn-Kong; Lai, W. C. |
| 國立成功大學 |
2006-06 |
High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD
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Tsai, C. M.; Sheu, Jinn-Kong; Wang, P. T.; Lai, W. C.; Shei, Shih-Chang; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Yan-Kuin |
| 國立成功大學 |
2006-04 |
GaN-based p-i-n sensors with ITO contacts
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Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S. |
| 國立成功大學 |
2006-03-13 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
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Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C. |
| 國立成功大學 |
2006-01 |
Rapid thermal annealed InGaN/GaN flip-chip LEDs
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Chen, W. S.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Lai, W. C.; Kuo, C. H.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F. |
| 國立成功大學 |
2006-01 |
Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications
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Shi, Jin-Wei; Huang, H. Y.; Sheu, Jinn-Kong; Hsieh, S. H.; Wu, Y. S.; Lu, J. Y.; Huang, F. H.; Lai, W. C. |
| 國立臺灣大學 |
2006 |
Formation and properties of stannate conversion coatings on AZ61 magnesium alloys
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Lin, C.S.; Lin, H.C.; Lin, K.M.; Lai, W.C. |
| 國立臺灣大學 |
2006 |
Essential oil from the leaves of Cryptomeria japonica acts as a silverfish (Lepisma saccharina) repellent and insecticide
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Wang, S. Y.; Lai, W. C.; Chu, F. H.; Lin, C. T.; Shen, S. Y.; Chang, S. T. |
| 國立成功大學 |
2005-10 |
Nitride-based light-emitting diodes with p-AlInGaN surface layers
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Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T. |
| 國立成功大學 |
2005-08 |
InGaN-GaN MQW LEDs with Si treatment
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, S. C.; Tsai, J. M.; Lai, W. C.; Kuo, Chih-Hung; Chang, C. S. |
| 國立臺灣大學 |
2005-05 |
Composite Moment Frame – Full Scale Testing Confirms Seismic Performance
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Deierlein, G. G.; Cordova, P.; Tsai, K.C.; Chen, C.H.; Lai, W.C. |
| 國立成功大學 |
2005 |
Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors
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Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J. |
| 國立成功大學 |
2005 |
Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer
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�Sheu, �Jinn-Kong; Lee, M. L.; Lai, W. C.; Tseng, H. C.; Chi, G. C. |
| 國立成功大學 |
2005 |
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase
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�Sheu, �Jinn-Kong; Chen, S. S.; Lee, M. L.; Lai, W. C.; Chang, W. H.; Chi, G. C. |
| 國立成功大學 |
2004-10 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
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Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-09 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, W. C.; Chi, Gou-Chung |
| 國立成功大學 |
2004-04 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-03-01 |
InGaN/GaN multi-quantum dot light-emitting diodes
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Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H. |
| 國立成功大學 |
2004-03 |
Nitride-based LEDs with textured side walls
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M. |
| 國立成功大學 |
2004-01-15 |
Nitride-based near-ultraviolet LEDs with an ITO transparent contact
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Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M. |
| 國立成功大學 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers
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Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T |
| 臺大學術典藏 |
2004 |
Study of the miscibility and crystallization behavior of poly(ethylene oxide)/poly(vinyl alcohol) blends
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Lai, W.-C.; Liau, W.-B.; WEN-BIN LIAU |
| 國立成功大學 |
2003-11 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-11 |
Nitride-based blue LEDs with GaN/SiN double buffer layers
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Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C. |
| 國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-06-26 |
Gigantic jets between a thundercloud and the ionosphere
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Su, Han-Tzong; Hsu, R. R.; Chen, A. B.; Wang, Y. C.; Hsiao, W. S.; Lai, W. C.; Lee, Lou-Chuang; Sato, M.; Fukunishi, H. |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
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Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
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Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
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Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A. |
| 國立成功大學 |
2003-03 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
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Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C. |
| 國立成功大學 |
2003-02 |
Si and Zn co-doped InGaN-GaN white light-emitting diodes
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Chang, Shoou-Jinn; Wu, L. W.; Su, Yan-Kuin; Kuo, C. H.; Lai, W. C.; Hsu, Y. P.; Sheu, Jinn-Kong; Chen, S. F.; Tsai, J. M. |
| 國立成功大學 |
2003-01 |
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
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Sheu, Jinn-Kong; Chang, Shoou-Jinn; Kuo, C. H.; Su, Yan-Kuin; Wu, L. W.; Lin, Y. C.; Lai, W. C.; Tsai, J. M.; Chi, Gou-Chung; Wu, R. K. |
| 國立成功大學 |
2003 |
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode
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Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu |
| 國立成功大學 |
2003 |
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer
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Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi |
| 國立成功大學 |
2003 |
Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers
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Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen |
| 國立成功大學 |
2003 |
Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer
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Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M. |
| 國立成功大學 |
2003 |
Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer
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�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M. |
| 國立成功大學 |
2003 |
Nitride-based near UV MQW LEDs with AlGaN barrier layers
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Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M. |
| 國立成功大學 |
2002-08 |
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
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Chang, Shoou-Jinn; Kuo, C. H.; Su, Yan-Kuin; Wu, L. W.; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Chen, Jenn-Fang; Tsai, J. M. |
| 國立成功大學 |
2002 |
GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes
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Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M. |
Showing items 236-285 of 290 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
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