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機構	日期	題名	作者
國立成功大學	2006-01	Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications	Shi, Jin-Wei; Huang, H. Y.; Sheu, Jinn-Kong; Hsieh, S. H.; Wu, Y. S.; Lu, J. Y.; Huang, F. H.; Lai, W. C.
國立臺灣大學	2006	Formation and properties of stannate conversion coatings on AZ61 magnesium alloys	Lin, C.S.; Lin, H.C.; Lin, K.M.; Lai, W.C.
國立臺灣大學	2006	Essential oil from the leaves of Cryptomeria japonica acts as a silverfish (Lepisma saccharina) repellent and insecticide	Wang, S. Y.; Lai, W. C.; Chu, F. H.; Lin, C. T.; Shen, S. Y.; Chang, S. T.
國立成功大學	2005-10	Nitride-based light-emitting diodes with p-AlInGaN surface layers	Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T.
國立成功大學	2005-08	InGaN-GaN MQW LEDs with Si treatment	Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, S. C.; Tsai, J. M.; Lai, W. C.; Kuo, Chih-Hung; Chang, C. S.
國立臺灣大學	2005-05	Composite Moment Frame – Full Scale Testing Confirms Seismic Performance	Deierlein, G. G.; Cordova, P.; Tsai, K.C.; Chen, C.H.; Lai, W.C.
國立成功大學	2005	Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors	Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J.
國立成功大學	2005	Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer	�Sheu, �Jinn-Kong; Lee, M. L.; Lai, W. C.; Tseng, H. C.; Chi, G. C.
國立成功大學	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase	�Sheu, �Jinn-Kong; Chen, S. S.; Lee, M. L.; Lai, W. C.; Chang, W. H.; Chi, G. C.
國立成功大學	2004-10	Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures	Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong
國立成功大學	2004-09	Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, W. C.; Chi, Gou-Chung
國立成功大學	2004-04	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong
國立成功大學	2004-03-01	InGaN/GaN multi-quantum dot light-emitting diodes	Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H.
國立成功大學	2004-03	Nitride-based LEDs with textured side walls	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.
國立成功大學	2004-01-15	Nitride-based near-ultraviolet LEDs with an ITO transparent contact	Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M.
國立成功大學	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T
臺大學術典藏	2004	Study of the miscibility and crystallization behavior of poly(ethylene oxide)/poly(vinyl alcohol) blends	Lai, W.-C.; Liau, W.-B.; WEN-BIN LIAU
國立成功大學	2003-11	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong
國立成功大學	2003-11	Nitride-based blue LEDs with GaN/SiN double buffer layers	Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C.
國立成功大學	2003-11	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K.
國立成功大學	2003-08-01	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-08-01	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-08	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong
國立成功大學	2003-06-26	Gigantic jets between a thundercloud and the ionosphere	Su, Han-Tzong; Hsu, R. R.; Chen, A. B.; Wang, Y. C.; Hsiao, W. S.; Lai, W. C.; Lee, Lou-Chuang; Sato, M.; Fukunishi, H.
國立成功大學	2003-05	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M.
國立成功大學	2003-05	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R.
國立成功大學	2003-05	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y.
國立成功大學	2003-04-28	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-04	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A.
國立成功大學	2003-03	Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes	Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C.
國立成功大學	2003-02	Si and Zn co-doped InGaN-GaN white light-emitting diodes	Chang, Shoou-Jinn; Wu, L. W.; Su, Yan-Kuin; Kuo, C. H.; Lai, W. C.; Hsu, Y. P.; Sheu, Jinn-Kong; Chen, S. F.; Tsai, J. M.
國立成功大學	2003-01	White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors	Sheu, Jinn-Kong; Chang, Shoou-Jinn; Kuo, C. H.; Su, Yan-Kuin; Wu, L. W.; Lin, Y. C.; Lai, W. C.; Tsai, J. M.; Chi, Gou-Chung; Wu, R. K.
國立成功大學	2003	High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode	Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer	�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M.
國立成功大學	2003	Nitride-based near UV MQW LEDs with AlGaN barrier layers	Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.
國立成功大學	2002-08	400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes	Chang, Shoou-Jinn; Kuo, C. H.; Su, Yan-Kuin; Wu, L. W.; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Chen, Jenn-Fang; Tsai, J. M.
國立成功大學	2002	GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes	Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M.
國立成功大學	2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	�Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C.
國立成功大學	1995	Microfaults in high-porosity sandstones: an example form the Nanshilung Sandstone in the Chishan area=高孔隙率砂岩之微斷層: 以旗山地區之南勢崙砂岩為例	Lin C. W.; Lai W. C.; Chung K. J.
國立臺灣大學	1994	Primary Productivity Derived from Ocean Color Image NE of Taiwan	劉倬騰; Lai, W. C.; Liu, Cho-Teng; Lai, W. C.
國立臺灣大學	1992	Protease-Like Sequence in Hepatitis B Virus Core Antigen is not Involved in the Cleavage Process of Core Protein in Escherichia Coli	黃麗華; Lin, Y. J.; Lai, W. C.; Hwang, Lin-Hwa; Lin, Y. J.; Lai, W. C.
淡江大學		Device Performance of the Tubular Membrane Dialyzer Incorporating Ultrafiltration Effects on the Dialysis Efficiency	Ho, Chii-Dong;Tu, J.W.;Lim, J.W.;Lai, W.C.

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