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Institution	Date	Title	Author
國立臺灣大學	2005-05	Composite Moment Frame – Full Scale Testing Confirms Seismic Performance	Deierlein, G. G.; Cordova, P.; Tsai, K.C.; Chen, C.H.; Lai, W.C.
國立成功大學	2005	Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors	Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J.
國立成功大學	2005	Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer	�Sheu, �Jinn-Kong; Lee, M. L.; Lai, W. C.; Tseng, H. C.; Chi, G. C.
國立成功大學	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase	�Sheu, �Jinn-Kong; Chen, S. S.; Lee, M. L.; Lai, W. C.; Chang, W. H.; Chi, G. C.
國立成功大學	2004-10	Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures	Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong
國立成功大學	2004-09	Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, W. C.; Chi, Gou-Chung
國立成功大學	2004-04	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong
國立成功大學	2004-03-01	InGaN/GaN multi-quantum dot light-emitting diodes	Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H.
國立成功大學	2004-03	Nitride-based LEDs with textured side walls	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.
國立成功大學	2004-01-15	Nitride-based near-ultraviolet LEDs with an ITO transparent contact	Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M.
國立成功大學	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T
臺大學術典藏	2004	Study of the miscibility and crystallization behavior of poly(ethylene oxide)/poly(vinyl alcohol) blends	Lai, W.-C.; Liau, W.-B.; WEN-BIN LIAU
國立成功大學	2003-11	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong
國立成功大學	2003-11	Nitride-based blue LEDs with GaN/SiN double buffer layers	Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C.
國立成功大學	2003-11	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K.
國立成功大學	2003-08-01	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-08-01	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-08	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong
國立成功大學	2003-06-26	Gigantic jets between a thundercloud and the ionosphere	Su, Han-Tzong; Hsu, R. R.; Chen, A. B.; Wang, Y. C.; Hsiao, W. S.; Lai, W. C.; Lee, Lou-Chuang; Sato, M.; Fukunishi, H.
國立成功大學	2003-05	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M.
國立成功大學	2003-05	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R.
國立成功大學	2003-05	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y.
國立成功大學	2003-04-28	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-04	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A.
國立成功大學	2003-03	Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes	Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C.

Showing items 251-275 of 290 (12 Page(s) Totally)
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