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"lai w c"的相關文件
顯示項目 256-280 / 290 (共12頁)
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| 國立成功大學 |
2004-09 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, W. C.; Chi, Gou-Chung |
| 國立成功大學 |
2004-04 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-03-01 |
InGaN/GaN multi-quantum dot light-emitting diodes
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Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H. |
| 國立成功大學 |
2004-03 |
Nitride-based LEDs with textured side walls
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M. |
| 國立成功大學 |
2004-01-15 |
Nitride-based near-ultraviolet LEDs with an ITO transparent contact
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Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M. |
| 國立成功大學 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers
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Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T |
| 臺大學術典藏 |
2004 |
Study of the miscibility and crystallization behavior of poly(ethylene oxide)/poly(vinyl alcohol) blends
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Lai, W.-C.; Liau, W.-B.; WEN-BIN LIAU |
| 國立成功大學 |
2003-11 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-11 |
Nitride-based blue LEDs with GaN/SiN double buffer layers
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Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C. |
| 國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-06-26 |
Gigantic jets between a thundercloud and the ionosphere
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Su, Han-Tzong; Hsu, R. R.; Chen, A. B.; Wang, Y. C.; Hsiao, W. S.; Lai, W. C.; Lee, Lou-Chuang; Sato, M.; Fukunishi, H. |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
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Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
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Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
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Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A. |
| 國立成功大學 |
2003-03 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
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Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C. |
| 國立成功大學 |
2003-02 |
Si and Zn co-doped InGaN-GaN white light-emitting diodes
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Chang, Shoou-Jinn; Wu, L. W.; Su, Yan-Kuin; Kuo, C. H.; Lai, W. C.; Hsu, Y. P.; Sheu, Jinn-Kong; Chen, S. F.; Tsai, J. M. |
| 國立成功大學 |
2003-01 |
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
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Sheu, Jinn-Kong; Chang, Shoou-Jinn; Kuo, C. H.; Su, Yan-Kuin; Wu, L. W.; Lin, Y. C.; Lai, W. C.; Tsai, J. M.; Chi, Gou-Chung; Wu, R. K. |
| 國立成功大學 |
2003 |
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode
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Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu |
| 國立成功大學 |
2003 |
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer
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Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi |
| 國立成功大學 |
2003 |
Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers
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Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen |
顯示項目 256-280 / 290 (共12頁)
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