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"lai wei chih"的相關文件
顯示項目 56-80 / 91 (共4頁)
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| 國立成功大學 |
2011-03 |
Optical and Electrical Properties of mu-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
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Hsu, Che-Kang; Sheu, Jinn-Kong; Wang, Jia-Kuen; Lee, Ming-Lun; Chang, Kuo-Hua; Tu, Shang-Ju; Lai, Wei-Chih |
| 國立成功大學 |
2011 |
Characteristics of InGaNsapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
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Yang, Chih-Ciao; Sheu, Jinn-Kong; Huanga, Min-Shun; Tua, Shang-Ju; Huanga, Feng-Wen; Changa, Kuo-Hua; Lee, Ming-Lun; Lai, Wei-Chih |
| 國立成功大學 |
2011 |
Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling
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Hsu, Che-Kang; Sheu, Jinn-Kong; Wang, Jia-Kuen; Lee, Ming-Lun; Chang, Kuo-Hua; Tu, Shang-Ju; Lai, Wei-Chih |
| 國立成功大學 |
2010 |
Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
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Hsu, Che-Kang;Sheu, Jinn-Kong;Wang, Jia-Kuen;Lee, Ming-Lun;Chang, Kuo-Hua;Tu, Shang-Ju;Lai, Wei-Chih |
| 國立成功大學 |
2009-11-15 |
GaN-Based LEDs With GaN mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads
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Peng, Li-Chi; Lai, Wei-Chih; Chang, Ming-Nan; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2009-10 |
The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
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Shei, Shih-Chang; Lai, Wei-Chih; Sheu, Jinn-Kong; Hung, I-Hsiu; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
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Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 國立成功大學 |
2009-07 |
The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers
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Shi, Jin-Wei; Guol, Shi-Hao; Lin, C. S.; Sheu, Jinn-Kong; Chang, Kuo-Hua; Lai, Wei-Chih; Kuo, C. H.; Tun, Chun-Ju; Chyi, Jen-Inn |
| 國立成功大學 |
2009-05 |
Light Output Improvement of Oxide-Textured InGaN-Based Light-Emitting Diodes by Bias-Assisted Photoelectrochemical Oxidation With Imprint Technique
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Yeh, Chia-Yuan; Lai, Wei-Chih; Hsueh, T. H.; Yang, Y. Y.; Sheu, Jinn-Kong; Ringer, S. P.; Gault, B. |
| 國立成功大學 |
2009-03 |
Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers
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Sheu, Jinn-Kong; Yang, Chih-Ciao; Tu, Shang-Ju; Chang, Kuo-Hua; Lee, Ming-Lun; Lai, Wei-Chih; Peng, Li-Chi |
| 國立成功大學 |
2009 |
Characterization of Gallium-Doped Zinc Oxide Contact on n-Type Gallium Nitride Epitaxial Layers
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Sheu, Jinn-Kong; Chang, Kuo-Hua; Lee, M. L.; Huang, J. F.; Kang, K. S.; Wang, W. L.; Lai, Wei-Chih; Hsueh, T. H. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
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Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 國立成功大學 |
2008-11 |
Linear Cascade GaN-Based Green Light-Emitting Diodes With Invariant High-Speed/Power Performance Under High-Temperature Operation
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Shi, Jin-Wei; Chen, P. Y.; Chen, C. C.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Yun-Chih; Lee, Po-Shen; Yang, Shih-Pu; Wu, Mount-Learn |
| 國立成功大學 |
2008-10-01 |
Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition
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Fu, Y. K.; Kuo, C. H.; Tun, Chun-Ju; Kuo, C. W.; Lai, Wei-Chih; Chi, Gou-Chung; Pan, Ching-Jen; Chen, M. C.; Hong, H. F.; Lan, S. M. |
| 國立成功大學 |
2008-09-08 |
Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads
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Sheu, Jinn-Kong; Hung, I-Hsiu; Lai, Wei-Chih; Shei, Shih-Chang; Lee, M. L. |
| 國立成功大學 |
2008-08 |
Characterization of Mg-Doped AlInN annealed in nitrogen and oxygen ambients
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Cheng, An-Ting; Su, Yan-Kuin; Lai, Wei-Chih; Chen, Ying-Zhi; Kuo, S. Y. |
| 國立成功大學 |
2008-05 |
Excess carrier dynamics of InGaN/GaN multiple-quantum-well light-emitting diodes with various silicon barrier doping profiles
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Li, Yun-Li; Lai, Wei-Chih; Chang, Yun-Chorng |
| 國立成功大學 |
2008-04 |
Focused ion beam milled InGaN/GaN multiple quantum well nanopillars
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Wu, Shang-En; Hsueh, Tao-Hung; Liu, Chuan-Pu; Sheu, Jinn-Kong; Lai, Wei-Chih; Chang, Shoou-Jinn |
| 國立成功大學 |
2008-04 |
Metalorganic vapor phase epitaxy growth of m-plane GaN using LiAlO2 substrates
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Cheng, An-Ting; Su, Yan-Kuin; Lai, Wei-Chih; Chen, Ying-Zhi |
| 國立成功大學 |
2008-03 |
Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions
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Shi, Jin-Wei; Chen, C. C.; Wang, C. K.; Lin, C. S.; Sheu, Jinn-Kong; Lai, Wei-Chih; Kuo, C. H.; Tun, Chun-Ju; Yang, T. H.; Tsao, F. C.; Chyi, J. I |
| 國立成功大學 |
2008-02 |
High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures
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Sheu, Jinn-Kong; Sheu, Jinn-Kong; Chen, C. H.; Lin, G. R.; Lai, Wei-Chih |
| 國立成功大學 |
2008 |
Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer
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Kuo, C. H.; Yeh, C. L.; Chen, P. H.; Lai, Wei-Chih; Tun, Chun-Ju; Sheu, Jinn-Kong; Chi, Gou-Chung |
| 國立成功大學 |
2008 |
Effect of the electrode pattern on current spreading and driving voltage in a GaN/sapphire LED chip
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Sheu, Gwo-Jiun; Hwu, Farn-Shiun; Chen, Jyh-Chen; Sheu, Jinn-Kong; Lai, Wei-Chih |
| 國立成功大學 |
2007-07 |
Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs
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Hsueh, Kuang-Po; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju; Hsu, Chia-Hung; Lin, Bi-Hsuan |
| 國立成功大學 |
2007-03-26 |
Temperature-dependent study of n-ZnO/p-GaN diodes
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Hsueh, Kuang-Po; Huang, Shou-Chien; Li, Ching-Tai; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju |
顯示項目 56-80 / 91 (共4頁)
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