|
"lai yen lin"的相關文件
顯示項目 11-20 / 20 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立成功大學 |
2008-02 |
The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowth
|
Chang, Ching-I; Lai, Yen-Lin; Liu, Chuan-Pu; Wang, Ruey-Chi |
| 國立成功大學 |
2007-08-27 |
Structural and optical properties of cubic-InN quantum dots prepared by ion implantation in Si (100) substrate
|
Huang, Yi-Kai; Liu, Chuan-Pu; Lai, Yen-Lin; Wang, Cheng-Yu; Lai, Yi-Feng; Chung, Hung-Chin |
| 國立成功大學 |
2006-12-11 |
氮化銦鎵(類量子點)/氮化鎵多重量子井之微結構與光學性質之研究
|
賴彥霖; Lai, Yen-Lin |
| 國立成功大學 |
2006-12-11 |
氮化銦鎵(類量子點)/氮化鎵多重量子井之微結構與光學性質之研究
|
賴彥霖; Lai, Yen-Lin |
| 國立成功大學 |
2006-10-09 |
Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells
|
Lai, Yen-Lin; Liu, Chuan-Pu; Lin, Yung-Hsiang; Lin, Ray-Ming; Lyu, Dong-Yuan; Peng, Zhao-Xiang; Lin, Tai-Yuan |
| 國立成功大學 |
2006-09-14 |
The influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells
|
Lai, Yen-Lin; Liu, Chuan-Pu; Hsueh, Tao-Hung; Lin, Yung-Hsiang; Chung, Hung-Chin; Lin, Ray-Ming; Chen, Zheng-Quan |
| 國立成功大學 |
2006-08-14 |
Origins of efficient green light emission in phase-separated InGaN quantum wells
|
Lai, Yen-Lin; Liu, Chuan-Pu; Lin, Yung-Hsiang; Hsueh, Tao-Hung; Lin, Ray-Ming; Lyu, Dong-Yuan; Peng, Zhao-Xiang; Lin, Tai-Yuan |
| 國立成功大學 |
2006-03-31 |
Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells
|
Liu, Chuan-Pu; Lai, Yen-Lin; Chen, Zheng-Quan |
| 國立成功大學 |
2006-03-01 |
Tuning the emitting wavelength of InGaN/GaN superlattices from blue, green to yellow by controlling the size of InGaN quasi-quantum dot
|
Lai, Yen-Lin; Liu, Chuan-Pu; Chen, Zheng-Quan |
| 國立成功大學 |
2005-03-21 |
Study of the dominant luminescence mechanism in InGaN/GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots
|
Lai, Yen-Lin; Liu, Chuan-Pu; Chen, Zheng-Quan |
顯示項目 11-20 / 20 (共1頁)
1
每頁顯示[10|25|50]項目
|
