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"lai yl"的相关文件
显示项目 26-35 / 65 (共7页)
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| 國立交通大學 |
2014-12-08T15:44:23Z |
A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors
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Chang, EY; Lai, YL; Lee, YS; Chen, SH |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Novel I-line phase shift mask technique for submicron T-shaped gate formation
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Chen, SH; Chang, HC; Fu, DK; Chang, EY; Lai, YL; Cahng, L |
| 國立交通大學 |
2014-12-08T15:27:38Z |
High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications
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Lai, YL; Chan, EY; Chang, CY; Liu, TH; Wang, SP |
| 國立交通大學 |
2014-12-08T15:27:09Z |
Highly selective etch process for the manufacture of GaAs power MESFET's
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Chang, EY; Lai, YL; Lee, YS |
| 國立交通大學 |
2014-12-08T15:16:29Z |
Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2
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Lai, CH; Lin, BC; Chang, KM; Hsieh, KY; Lai, YL |
| 國立交通大學 |
2014-12-08T15:04:17Z |
STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
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CHANG, EY; LAI, YL; LIN, KC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:52Z |
TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P
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LIN, KC; CHANG, EY; WANG, SP; LAI, YL; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:02:45Z |
High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P
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Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:44Z |
Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier
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Chai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:40Z |
5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
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Lai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT |
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