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Showing items 26-35 of 65  (7 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:44:23Z A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors Chang, EY; Lai, YL; Lee, YS; Chen, SH
國立交通大學 2014-12-08T15:42:17Z Novel I-line phase shift mask technique for submicron T-shaped gate formation Chen, SH; Chang, HC; Fu, DK; Chang, EY; Lai, YL; Cahng, L
國立交通大學 2014-12-08T15:27:38Z High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications Lai, YL; Chan, EY; Chang, CY; Liu, TH; Wang, SP
國立交通大學 2014-12-08T15:27:09Z Highly selective etch process for the manufacture of GaAs power MESFET's Chang, EY; Lai, YL; Lee, YS
國立交通大學 2014-12-08T15:16:29Z Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2 Lai, CH; Lin, BC; Chang, KM; Hsieh, KY; Lai, YL
國立交通大學 2014-12-08T15:04:17Z STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION CHANG, EY; LAI, YL; LIN, KC; CHANG, CY
國立交通大學 2014-12-08T15:03:52Z TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P LIN, KC; CHANG, EY; WANG, SP; LAI, YL; CHANG, CY
國立交通大學 2014-12-08T15:02:45Z High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC
國立交通大學 2014-12-08T15:02:44Z Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier Chai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC
國立交通大學 2014-12-08T15:02:40Z 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications Lai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT

Showing items 26-35 of 65  (7 Page(s) Totally)
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