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Showing items 31-40 of 65  (7 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:04:17Z STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION CHANG, EY; LAI, YL; LIN, KC; CHANG, CY
國立交通大學 2014-12-08T15:03:52Z TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P LIN, KC; CHANG, EY; WANG, SP; LAI, YL; CHANG, CY
國立交通大學 2014-12-08T15:02:45Z High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC
國立交通大學 2014-12-08T15:02:44Z Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier Chai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC
國立交通大學 2014-12-08T15:02:40Z 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications Lai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT
國立交通大學 2014-12-08T15:02:13Z A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography Lai, YL; Chang, EY; Chang, CY; Yang, HPD; Nakamura, K; Shy, SL
國立交通大學 2014-12-08T15:02:13Z Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier Chai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC
國立交通大學 2014-12-08T15:01:59Z High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications Lai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP
國立交通大學 2014-12-08T15:01:33Z The high-pressure synthesis and characterization of some praseodymium-substituted rare-earth based R2Ba4Cu7O14+delta (R = Nd, Sm, Eu, Gd, Ho, Tm) Chen, TM; Lai, YL; Kao, FS
國立交通大學 2014-12-08T15:01:33Z The high pressure synthesis and characterization of some rare-earth based praseodymium-substituted R2Ba4Cu7O14+delta (R = Sm, Gd, Ho) cuprates Lai, YL; Chen, TM; Shih, JT; Kao, HCI

Showing items 31-40 of 65  (7 Page(s) Totally)
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