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Taiwan Academic Institutional Repository >
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"laih lh"
Showing items 11-20 of 20 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:26:06Z |
Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers
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Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
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Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
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Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
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Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:16:36Z |
A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer
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Huang, HW; Kao, CC; Chang, YA; Kuo, HC; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer
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Chen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:53Z |
Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions
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Jen, TS; Shin, NF; Laih, LH; Chen, YA; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:47Z |
Porous silicon light-emitting diode with tunable color
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Chen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:29Z |
Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
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Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
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