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Showing items 11-17 of 17  (2 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2001 Sequence Influence of Nonidentical InGaAsP Quantum Wells on Broadband Characteristics of Semiconductor Optical Amplifiers/ Superluminescent Diodes Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學 2000-12 InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng
國立臺灣大學 2000-12 Extremely broadband InGaAsP/InP superluminescent diodes Wu, Bing-Ruey; Lin, Ching-Fuh; Laih, Lih-Wen; Shih, Tien-Tsorng
國立成功大學 2000-09 Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung
國立臺灣大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung
國立臺灣大學 1996 On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs) Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung

Showing items 11-17 of 17  (2 Page(s) Totally)
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