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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:56:13Z |
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory Applications
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Khwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung |
| 國立交通大學 |
2017-04-21T06:56:07Z |
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory Applications
|
Khwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung |
| 國立交通大學 |
2017-04-21T06:49:55Z |
A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications
|
Khwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; BrightSky, Matthew; Kim, SangBum; Lung, Hsiang-Lam; Lam, Chung |
Showing items 1-3 of 3 (1 Page(s) Totally)
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