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"lan h s"
Showing items 11-20 of 28 (3 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T15:23:22Z |
In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement
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CHEE-WEE LIU; Liu, C.W.; Lan, H.-S.; Wong, I.-H.;Chen, Y.-T.;Huang, S.-H.;Tu, W.-H.;Chen, Y.-S.;Shieh, T.-C.;Lin, T.-Y.;Lan, H.-S.;Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y. |
| 臺大學術典藏 |
2018-09-10T15:23:22Z |
Asymmetric keep-out zone of through-silicon via using 28-nm technology node
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Yan, J.-Y.;Jan, S.-R.;Huang, Y.-C.;Lan, H.-S.;Huang, Y.-H.;Hung, B.;Chan, K.-T.;Huang, M.;Yang, M.-T.;Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T14:58:05Z |
Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors
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Lan, H.-S.;Liu, C.W.; Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:22:34Z |
Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ?43, ?2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response
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Chang, H.-C.; Chen, Y.-T.; Wong, I.-H.; Lan, H.-S.; Luo, S.-J.; Lin, J.-Y.; Tseng, Y.-J.; Liu, C.W.; Hu, C.; Yang, F.-L.; Lin, C.-M.; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2018-09-10T09:19:11Z |
Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain
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Lan, H.-S.; Chen, Y.-T.; Lin, J.-Y.; Liu, C.W.; CHIH-WEN LIU |
| 臺大學術典藏 |
2018-09-10T08:42:52Z |
Electron scattering in Ge metal-oxide-semiconductor field-effect transistors
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Lan, H.-S.;Chen, Y.-T.;Hsu, W.;Chang, H.-C.;Lin, J.-Y.;Chang, W.-C.;Liu, C.W.; Lan, H.-S.; Chen, Y.-T.; Hsu, W.; Chang, H.-C.; Lin, J.-Y.; Chang, W.-C.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T08:42:52Z |
Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers
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Lan, H.-S.;Chan, S.-T.;Cheng, T.-H.;Chen, C.-Y.;Jan, S.-R.;Liu, C.W.; Lan, H.-S.; Chan, S.-T.; Cheng, T.-H.; Chen, C.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T08:42:50Z |
Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates
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Chen, Y.-T.;Lan, H.-S.;Hsu, W.;Fu, Y.-C.;Lin, J.-Y.;Liu, C.W.; Chen, Y.-T.; Lan, H.-S.; Hsu, W.; Fu, Y.-C.; Lin, J.-Y.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T08:38:10Z |
Theoretical and experimental demonstration of electronic state of GeO 2
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Chang, H.-C.;Lu, S.-C.;Chang, W.-C.;Chou, T.-P.;Lan, H.-S.;Lin, C.-M.;Liu, C.W.; Chang, H.-C.; Lu, S.-C.; Chang, W.-C.; Chou, T.-P.; Lan, H.-S.; Lin, C.-M.; Liu, C.W.; CHIH-WEN LIU |
| 臺大學術典藏 |
2018-09-10T08:15:12Z |
High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response
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Hsu, W.; Chen, Y.-T.; Lan, H.-S.; Lee, C.-H.; Chang, H.-C.; Lee, H.-Y.; Luo, G.-L.; Chien, C.-H.; Liu, C.W.; Hu, C.; Yang, F.-L.; Fu, Y.-C.; CHEE-WEE LIU et al. |
Showing items 11-20 of 28 (3 Page(s) Totally)
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