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Taiwan Academic Institutional Repository >
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"lan wen how"
Showing items 11-27 of 27 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:28:13Z |
Improved Output Power of Nitride-Based Light-Emitting Diodes With Convex-Patterned Sapphire Substrates
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Hsu, Yu-Ting; Yu, Cheng-Chang; Huang, Kai-Feng; Lan, Wen-How; Huang, Jing-En; Lin, Jia-Ching; Lin, Wen-Jen |
| 國立交通大學 |
2014-12-08T15:16:09Z |
Thermal annealing effect between Ni film and Mg-doped GaN layer
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Hsu, Chin-Yuan; Lan, Wen-How; Wu, YewChung Sermon |
| 國立交通大學 |
2014-12-08T15:15:28Z |
ICP-induced defects in GaN characterized by capacitance analysis
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Lan, Wen-How; Huang, Kuo-Chin; Huang, Kai Feng |
| 國立交通大學 |
2014-12-08T15:11:14Z |
Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing
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Huang, Kuo-Chin; Lan, Wen-How; Huang, Kai Feng |
| 國立成功大學 |
2003-09 |
High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors
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Kuan, Ta-Ming; Chang, Shoou-Jinn; Su, Yan-Kuin; Ko, Chih-Hsin; Webb, James B.; Bardwell, Jennifer A.; Liu, Ying; Tang, Haipeng; Lin, Web-Jen; Cherng, Ya-Tung; Lan, Wen-How |
| 國立成功大學 |
2002-10-01 |
Photo-enhanced chemical wet etching of GaN
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Ko, Chih-Hsin; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, Wen-How; Webb, James; Tu, M. C.; Cherng, Ya-Tung |
| 國立成功大學 |
2002-08 |
InGaN/GaN light emitting diodes with a p-down structure
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Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, Chih-Hsin; Chen, Jiann-Fuh; Kuan, Ta-Ming; Lan, Wen-How; Lin, Wen-Jen; Cherng, Y. T.; Webb, James |
| 國立成功大學 |
2002-08 |
ZnCdSeTe-based orange light-emitting diode
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Chen, W. R.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Jiann-Fuh; Lan, Wen-How; Lin, Wen-Jen; Cherng, Y. T.; Liu, Chun-Hsing; Liaw, U. H. |
| 國立成功大學 |
2002-07 |
ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy
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Chen, Wen-Ray; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chen, Jone-Fang; Lan, Wen-How; Lin, Wen-Jen; Cherng, Ya-Tung; Liu, Chun-Hsing; Liaw, Uang-Heay |
| 國立成功大學 |
2002-05-01 |
On the carrier concentration and Hall mobility in GaN epilayers
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Ko, Chih-Hsin; Chang, Shoou-Jinn; Su, Yan-Kuin; Lan, Wen-How; Chen, Jone-Fang; Kuan, Ta-Ming; Huang, Yao-Cong; Chiang, Chung-I.; Webb, Jim; Lin, Wen-Jen |
| 國立成功大學 |
2002-04 |
P-down InGaN/GaN multiple quantum wells light-emitting diode structure grown by metal-organic vapor-phase epitaxy
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Ko, Chih-Hsin; Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, Ta-Ming; Chiang, Chung-I; Lan, Wen-How; Lin, Wen-Jen; Webb, James |
| 國立成功大學 |
2002-02-01 |
ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes
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Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Wen-Ray; Chen, Jone-Fang; Chen, Ming-Hong; Juang, Fuh-Shyang; Lan, Wen-How; Lin, Wen-Jen; Cherng, Ya-Tung; Liu, Chun-Hsing; Liaw, Uang-Heay |
| 國立成功大學 |
2002-02 |
ZnSTeSe metal-semiconductor-metal photodetectors
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Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, W. R.; Chen, Jiann-Fuh; Lan, Wen-How; Lin, Wen-Jen; Cherng, Y. T.; Liu, Chun-Hsing; Liaw, U. H. |
| 國立成功大學 |
2001-03-01 |
Au/AuBe/Cr contact to p-ZnTe
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Chang, Shoou-Jinn; Chen, W. R.; Su, Yan-Kuin; Chen, Jiann-Fuh; Lan, Wen-How; Chiang, Chung-I; Lin, Wen-Jen; Cherng, Y. T.; Liu, Chun-Hsing |
| 國立成功大學 |
2000-07 |
The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents
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Su, Yan-Kuin; Chen, W. R.; Chang, Shoou-Jinn; Juang, Fuh-Shyang; Lan, Wen-How; Lin, A. C. H.; Chang, H |
| 國立成功大學 |
2000-06 |
Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H-2/Ar and CH4/H-2/Ar
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Chen, W. R.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lan, Wen-How; Lin, A. C. H.; Chang, H |
| 國立成功大學 |
1999-12-09 |
Formation of local p(+) region in ZnSe by Cu3Ge contact
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Chang, Shoou-Jinn; Chen, W. R.; Su, Yan-Kuin; Chen, Jiann-Fuh; Lan, Wen-How; Lin, A. C. H.; Chang, H |
Showing items 11-27 of 27 (1 Page(s) Totally)
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