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Taiwan Academic Institutional Repository >
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"lan wh"
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| 國立交通大學 |
2019-04-02T05:59:24Z |
Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures
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Chen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK |
| 臺大學術典藏 |
2018-09-10T04:44:31Z |
Effects of physiological environments on the hydration behavior of mineral trioxide aggregate
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Lee, Y.-L.;Lee, B.-S.;Lin, F.-H.;Yun Lin, A.;Lan, W.-H.;Lin, C.-P.Lee, Yl;Lee, Bs;Lin, Fh;Yun Lin, A;Lan, Wh;Lin, Cp; Lee, YL; YUAN-LING LEE; Lee, BS; BOR-SHIUNN LEE; CHUN-PIN LIN; Lin, FH; Yun Lin, A; Lan, WH; Lin, CP |
| 國立交通大學 |
2014-12-08T15:47:14Z |
AuBe Ohmic contacts to p-type ZnTe
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Lan, WH; Lin, WJ; Cheng, YC; Tai, K; Tasi, CM; Wu, PH; Cheng, KH; Chou, ST; Yang, CM; Huang, KF |
| 國立交通大學 |
2014-12-08T15:43:53Z |
Beryllium-implanted P-type GaN with high carrier concentration
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Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:18Z |
Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
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Hsu, CY; Lan, WH; Wu, YS |
| 國立交通大學 |
2014-12-08T15:40:15Z |
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
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Chen, LC; Hsu, CY; Lan, WH; Teng, SY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxy
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Kuo, MC; Chiu, KC; Shih, TH; Lai, YJ; Yang, CS; Chen, WK; Chuu, DS; Lee, MC; Chou, WC; Jeng, SY; Shih, YT; Lan, WH |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:17:51Z |
The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
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Hsu, CY; Lan, WH; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:05:38Z |
HIGH BREAKDOWN P-CHANNEL INSB MOSFET
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TU, SL; LAN, WH; CHIOU, TS; YANG, SJ; HUANG, KF |
Showing items 1-10 of 35 (4 Page(s) Totally)
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