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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立臺灣大學 |
2005-04 |
Cryogenic Operation of Third-Generation, 200-GHz Peak-fT , Silicon–Germanium Heterojunction Bipolar Transistors
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Banerjee, Bhaskar; Venkataraman, Sunitha; Lu, Yuan; Liang, Qingqing; Lee, Chang-Ho; Nuttinck, Sebastien; Heo, Dekhyuon; Chen, Emery Yi-Jan; Cressler, John D.; Laskar, Joy; Freeman, Greg; Ahlgren, David C. |
| 國立臺灣大學 |
2004-06 |
A low power Ka-band SiGe HBT VCO using line inductors
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Chen, Yi-Jan Emery; Kuo, Wei-Min Lance; Lee, Jongsoo; Cressler, J.D.; Laskar, Joy; Freeman, Greg |
| 臺大學術典藏 |
2004-06 |
A low power Ka-band SiGe HBT VCO using line inductors
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Chen, Yi-Jan Emery; Kuo, Wei-Min Lance; Lee, Jongsoo; Cressler, J.D.; Laskar, Joy; Freeman, Greg; Chen, Yi-Jan Emery; Kuo, Wei-Min Lance; Lee, Jongsoo; Cressler, J.D.; Laskar, Joy; Freeman, Greg |
Showing items 1-3 of 3 (1 Page(s) Totally)
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