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Showing items 41-65 of 76  (4 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2009 High Gate-Voltage Swing X-Band Amplifiers by Using in0.425Al0.575As/InGaAs Metamorphic High Electron Mobility Transistors Hsu, Wei-Chou; Lee, Ching-Sung; Yu, Shu-Jenn; Chen, Yeong-Jia
國立成功大學 2009 Investigations on In0.45Al0.55As/InxGa1-xAs Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiNx Passivation Lee, Ching-Sung; Hsu, Wei-Chou; Ho, Chiu-Sheng; Kao, An-Yung
國立成功大學 2008-12 Investigations on the Highly-Stable Thermal Characteristics of a Dilute Al0.3Ga0.7As/In0.3Ga0.7As0.99N0.01/GaAs Heterostructure Field Effect Transistor (HFET) Lee, Ching-Sung; Chou, Bo-I; Hsu, Wei-Chou; Su, Ke-Hua
國立成功大學 2008-08 A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer Yu, Shu-Jenn; Huang, Hui-Min; Lee, Ching-Sung; Wu, Chang-Luen; Hsu, Wei-Chou
國立成功大學 2008-04 Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei
國立成功大學 2008-04 Channel composition-dependent characteristics of delta-doped InxAl1-xAs/InyGa1-yAs metarnorphic high electron mobility transistors Lee, Ching-Sung; Chian, Chia-Jeng; Hsu, Wei-Chou; Su, Ke-Hua; Yu, Su-Jen
國立成功大學 2008-01 A flat gain/power responses 6-18 ghz power amplifier mimic with high pae by using transformer networks Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh
國立成功大學 2007-07 A Ku-band three-stage MMIC low-noise amplifier with superiorly low thermal-sensitivity coefficients Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh
國立成功大學 2007-06 An improved symmetrically-graded doped-channel heterostructure field-effect transistor Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen
國立成功大學 2007-06 Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hal; Huang, Ming-Feng
國立成功大學 2007-04 Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei
國立成功大學 2007-02 A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei
國立成功大學 2007 High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng
國立成功大學 2007 Comparative studies on double delta-doped Al0.3Ga0.7As/InxGa1-xAs/GaAs symmetrically graded doped-channel field-effect transistors Lee, Ching-Sung; Chen, Chien-Hung; Huang, Jun-Chin; Su, Ke-Hua
國立成功大學 2006-12 Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai
國立成功大學 2006-05 Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng
國立成功大學 2006-04 Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia
國立成功大學 2006 Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen
國立成功大學 2005-12 Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung
國立成功大學 2005-12 Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia
國立成功大學 2005-08 Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen
國立成功大學 2005-02 Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung
國立成功大學 2005-02 High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen
國立成功大學 2005-01-17 Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor Lee, Ching-Sung; Hsu, Wei-Chou
國立成功大學 2004-09 Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai

Showing items 41-65 of 76  (4 Page(s) Totally)
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