| 國立成功大學 |
2009 |
High Gate-Voltage Swing X-Band Amplifiers by Using in0.425Al0.575As/InGaAs Metamorphic High Electron Mobility Transistors
|
Hsu, Wei-Chou; Lee, Ching-Sung; Yu, Shu-Jenn; Chen, Yeong-Jia |
| 國立成功大學 |
2009 |
Investigations on In0.45Al0.55As/InxGa1-xAs Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiNx Passivation
|
Lee, Ching-Sung; Hsu, Wei-Chou; Ho, Chiu-Sheng; Kao, An-Yung |
| 國立成功大學 |
2008-12 |
Investigations on the Highly-Stable Thermal Characteristics of a Dilute Al0.3Ga0.7As/In0.3Ga0.7As0.99N0.01/GaAs Heterostructure Field Effect Transistor (HFET)
|
Lee, Ching-Sung; Chou, Bo-I; Hsu, Wei-Chou; Su, Ke-Hua |
| 國立成功大學 |
2008-08 |
A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer
|
Yu, Shu-Jenn; Huang, Hui-Min; Lee, Ching-Sung; Wu, Chang-Luen; Hsu, Wei-Chou |
| 國立成功大學 |
2008-04 |
Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2008-04 |
Channel composition-dependent characteristics of delta-doped InxAl1-xAs/InyGa1-yAs metarnorphic high electron mobility transistors
|
Lee, Ching-Sung; Chian, Chia-Jeng; Hsu, Wei-Chou; Su, Ke-Hua; Yu, Su-Jen |
| 國立成功大學 |
2008-01 |
A flat gain/power responses 6-18 ghz power amplifier mimic with high pae by using transformer networks
|
Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-07 |
A Ku-band three-stage MMIC low-noise amplifier with superiorly low thermal-sensitivity coefficients
|
Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-06 |
An improved symmetrically-graded doped-channel heterostructure field-effect transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2007-06 |
Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hal; Huang, Ming-Feng |
| 國立成功大學 |
2007-04 |
Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007-02 |
A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007 |
High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng |
| 國立成功大學 |
2007 |
Comparative studies on double delta-doped Al0.3Ga0.7As/InxGa1-xAs/GaAs symmetrically graded doped-channel field-effect transistors
|
Lee, Ching-Sung; Chen, Chien-Hung; Huang, Jun-Chin; Su, Ke-Hua |
| 國立成功大學 |
2006-12 |
Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai |
| 國立成功大學 |
2006-05 |
Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng |
| 國立成功大學 |
2006-04 |
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors
|
Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia |
| 國立成功大學 |
2006 |
Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures
|
Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia |
| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
|
Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
|
Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
|
Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
|
Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
| 國立成功大學 |
2004-05-03 |
Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2003-07 |
Off-state breakdown modeling for high-Schottky-barrier delta-doped In0.49Ga0.51P/In0.25Ga0.75As/InP high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2003-04 |
Bias-tunable multiple-transconductance with improved transport characteristics of delta-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs high electron mobility transistor using a graded superlattice spacer
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2002-10 |
Analytic modeling for drain-induced barrier lowering phenomenon of the InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Wu, Chang-Luen |
| 國立成功大學 |
2002-09 |
Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (vol. 30, pg 145, 2001)
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2002-06-29 |
摻雜通道式場效電晶體與高電子移動率電晶體元件特性之模擬分析研究
|
李景松; Lee, Ching-Sung |
| 國立成功大學 |
2002-02-01 |
Characteristics of delta-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 schottky layer
|
Hsu, Wei-Chou; Lee, Ching-Sung; Lin, Yu-Shyan |
| 國立成功大學 |
2001-09 |
Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2001-05 |
A delta-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer
|
Lee, Ching-Sung; Hsu, Wei-Chou; Li, Sheng-San; Ho, Pin |
| 國立成功大學 |
2000-10-15 |
High-temperature breakdown characteristics of delta-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Chen, Yen-Wei; Chen, Yung-Cha; Shieh, Her-Ming |
| 國立成功大學 |
2000-09-01 |
A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted delta-doped heterostructure field-effect transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Shieh, Hir-Ming; Su, Jan-Shing; Jain, Shin-Yuh; Lin, Wei |
