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Showing items 41-65 of 76 (4 Page(s) Totally)
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| 國立成功大學 |
2009 |
High Gate-Voltage Swing X-Band Amplifiers by Using in0.425Al0.575As/InGaAs Metamorphic High Electron Mobility Transistors
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Hsu, Wei-Chou; Lee, Ching-Sung; Yu, Shu-Jenn; Chen, Yeong-Jia |
| 國立成功大學 |
2009 |
Investigations on In0.45Al0.55As/InxGa1-xAs Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiNx Passivation
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Lee, Ching-Sung; Hsu, Wei-Chou; Ho, Chiu-Sheng; Kao, An-Yung |
| 國立成功大學 |
2008-12 |
Investigations on the Highly-Stable Thermal Characteristics of a Dilute Al0.3Ga0.7As/In0.3Ga0.7As0.99N0.01/GaAs Heterostructure Field Effect Transistor (HFET)
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Lee, Ching-Sung; Chou, Bo-I; Hsu, Wei-Chou; Su, Ke-Hua |
| 國立成功大學 |
2008-08 |
A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer
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Yu, Shu-Jenn; Huang, Hui-Min; Lee, Ching-Sung; Wu, Chang-Luen; Hsu, Wei-Chou |
| 國立成功大學 |
2008-04 |
Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2008-04 |
Channel composition-dependent characteristics of delta-doped InxAl1-xAs/InyGa1-yAs metarnorphic high electron mobility transistors
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Lee, Ching-Sung; Chian, Chia-Jeng; Hsu, Wei-Chou; Su, Ke-Hua; Yu, Su-Jen |
| 國立成功大學 |
2008-01 |
A flat gain/power responses 6-18 ghz power amplifier mimic with high pae by using transformer networks
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Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-07 |
A Ku-band three-stage MMIC low-noise amplifier with superiorly low thermal-sensitivity coefficients
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Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-06 |
An improved symmetrically-graded doped-channel heterostructure field-effect transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2007-06 |
Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hal; Huang, Ming-Feng |
| 國立成功大學 |
2007-04 |
Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007-02 |
A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007 |
High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng |
| 國立成功大學 |
2007 |
Comparative studies on double delta-doped Al0.3Ga0.7As/InxGa1-xAs/GaAs symmetrically graded doped-channel field-effect transistors
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Lee, Ching-Sung; Chen, Chien-Hung; Huang, Jun-Chin; Su, Ke-Hua |
| 國立成功大學 |
2006-12 |
Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai |
| 國立成功大學 |
2006-05 |
Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng |
| 國立成功大學 |
2006-04 |
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors
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Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia |
| 國立成功大學 |
2006 |
Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures
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Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia |
| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
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Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
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Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
Showing items 41-65 of 76 (4 Page(s) Totally)
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