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Taiwan Academic Institutional Repository >
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"lee ching sung"
Showing items 61-76 of 76 (4 Page(s) Totally)
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| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
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Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
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Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
| 國立成功大學 |
2004-05-03 |
Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2003-07 |
Off-state breakdown modeling for high-Schottky-barrier delta-doped In0.49Ga0.51P/In0.25Ga0.75As/InP high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2003-04 |
Bias-tunable multiple-transconductance with improved transport characteristics of delta-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs high electron mobility transistor using a graded superlattice spacer
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2002-10 |
Analytic modeling for drain-induced barrier lowering phenomenon of the InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistor
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Lee, Ching-Sung; Hsu, Wei-Chou; Wu, Chang-Luen |
| 國立成功大學 |
2002-09 |
Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (vol. 30, pg 145, 2001)
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2002-06-29 |
摻雜通道式場效電晶體與高電子移動率電晶體元件特性之模擬分析研究
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李景松; Lee, Ching-Sung |
| 國立成功大學 |
2002-02-01 |
Characteristics of delta-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 schottky layer
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Hsu, Wei-Chou; Lee, Ching-Sung; Lin, Yu-Shyan |
| 國立成功大學 |
2001-09 |
Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2001-05 |
A delta-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer
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Lee, Ching-Sung; Hsu, Wei-Chou; Li, Sheng-San; Ho, Pin |
| 國立成功大學 |
2000-10-15 |
High-temperature breakdown characteristics of delta-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou; Chen, Yen-Wei; Chen, Yung-Cha; Shieh, Her-Ming |
| 國立成功大學 |
2000-09-01 |
A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted delta-doped heterostructure field-effect transistor
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Lee, Ching-Sung; Hsu, Wei-Chou; Shieh, Hir-Ming; Su, Jan-Shing; Jain, Shin-Yuh; Lin, Wei |
Showing items 61-76 of 76 (4 Page(s) Totally)
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