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Showing items 1-25 of 34 (2 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:04:21Z |
Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer Engineering
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Lin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
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Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:26Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
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Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
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Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Multilevel resistive switching in Ti/CuxO/Pt memory devices
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Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
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Lin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
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Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:26Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
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Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:56Z |
Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
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Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:56:59Z |
A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large Array
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Lin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:55:58Z |
A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM
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Lin, Yu-Hsuan; Lee, Ming-Hsiu; Wu, Jau-Yi; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Chiang, Kuang-Hao; Lai, Erh-Kun; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:25Z |
Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm
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Lin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-16T06:15:45Z |
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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CHIOU, Bi Shiou; CHANG, Li Chun; HO, Chia Cheng; LEE, Dai Ying; SHEN, Yu Shu |
| 國立交通大學 |
2014-12-12T01:27:28Z |
二元金屬氧化物電阻式記憶元件之界面效應研究
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李岱螢; Lee, Dai-Ying; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:44:21Z |
Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application
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Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devices
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Reproducible resistive switching behavior in sputtered CeO(2) polycrystalline films
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:22Z |
Multilevel resistive switching in Ti/Cu(x)O/Pt memory devices
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Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:38:18Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer
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Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
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Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Unipolar Resistive Switching in ZrO2 Thin Films
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Zhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:36Z |
Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
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Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:22:53Z |
Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots
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Lee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen |
Showing items 1-25 of 34 (2 Page(s) Totally)
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