|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"lee dai ying"
Showing items 1-10 of 34 (4 Page(s) Totally)
1 2 3 4 > >>
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T06:04:21Z |
Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer Engineering
|
Lin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
|
Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
|
Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
|
Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:26Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
|
Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
|
Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Multilevel resistive switching in Ti/CuxO/Pt memory devices
|
Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
|
Lin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
|
Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:26Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
|
Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
Showing items 1-10 of 34 (4 Page(s) Totally)
1 2 3 4 > >>
View [10|25|50] records per page
|
