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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國家衛生研究院 2023-12 Cold atmospheric plasma-enabled platelet vesicle incorporated iron oxide nano-propellers for thrombolysis Jheng, PR;Chiang, CC;Kang, JH;Fan, YJ;Wu, KCW;Chen, YT;Liang, JW;Bolouki, N;Lee, JW;Hsieh, JH;Chuang, EY
國家衛生研究院 2021-11-16 Identification of prognostic biomarkers originating from the tumor stroma of betel quid-associated oral cancer tissues Liu, YH;Chen, YL;Lai, TY;Ko, YC;Chou, YF;Chen, PR;Hsiao, JR;Chang, JY;Shiah, SG;Lee, JW;Yang, JL;Lin, SF
臺大學術典藏 2021-11-03T01:38:38Z New exciplex systems composed of triazatruxene donors and N-heteroarene-cored acceptors Hu, YC; Lin, ZL; Huang, TC; Lee, JW; Wei, WC; Ko, TY; Lo, CY; Chen, DG; Chou, PT; Hung, WY; Wong, KT; PI-TAI CHOU
國立臺灣海洋大學 2016 Boosted photocatalytic efficiency through plasmonic field confinement with bowtie and diabolo nanostructures under LED irradiation Lee CH;Liao SC;Lin TR;Wang SH;Lai DY;Chiu PK;Lee JW;Wu WF
國立交通大學 2014-12-08T15:44:12Z Phase transformations in an Fe-8Al-10Ni-2C alloy Lee, JW; Liu, TF
國立交通大學 2014-12-08T15:44:06Z Phase transformations in an Fe-8Al-30Mn-1.5Si-1.5C alloy Lee, JW; Liu, TF
國立交通大學 2014-12-08T15:44:00Z High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film Lee, JW; Lee, CL; Lei, TF; Lai, CS
國立交通大學 2014-12-08T15:43:37Z The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films Lee, JW; Chen, WD; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:43:31Z Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure Lee, JW; Lin, SX; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:43:19Z Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma Lee, JW; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:42:22Z Thin oxides grown on disilane-based polysilicon Lee, JW; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:42:08Z Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM
國立交通大學 2014-12-08T15:41:37Z Growing high-performance tunneling oxide by CF4 plasma pretreatment Chang, TY; Lee, JW; Lei, TF; Lee, CL; Wen, HC
國立交通大學 2014-12-08T15:41:11Z Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design Li, YM; Lee, JW; Sze, SM
國立交通大學 2014-12-08T15:41:01Z Highly reliable nickel silicide formation with a Zr capping layer Lee, TL; Lee, JW; Lee, MC; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:40:06Z High reliability ultrathin interpolyoxynitride dielectrics prepared by N2O plasma annealing Wang, JC; Lee, JW; Kuo, LT; Lei, TF; Lee, CL
國立交通大學 2014-12-08T15:39:22Z Electrostatic discharge protection under pad design for copper-low-K VLSI circuits Lee, JW; Li, YM; Chao, A; Tang, H
國立交通大學 2014-12-08T15:39:00Z The influence of Cr alloying on microstructures of Fe-Al-Mn-Cr alloys Lee, JW; Wu, CC; Liu, TF
國立交通大學 2014-12-08T15:25:55Z Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs Tang, CS; Yu, SM; Chou, HM; Lee, JW; Li, YM
國立交通大學 2014-12-08T15:25:52Z A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs Tang, CS; Lo, SC; Lee, JW; Tsai, JH; Li, YM
國立交通大學 2014-12-08T15:19:23Z Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current Li, YM; Yu, SM; Lee, JW
國立交通大學 2014-12-08T15:18:51Z Performance and reliability of poly-Si TFTs on FSG buffer layer De Wang, S; Chang, TY; Chien, CH; Lo, WH; Sang, JY; Lee, JW; Lei, TF
國立交通大學 2014-12-08T15:18:40Z A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors Li, YM; Chou, HM; Lee, JW; Lee, BS
國立交通大學 2014-12-08T15:18:30Z Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs Li, YM; Chou, HM; Lee, JW
國立交通大學 2014-12-08T15:16:38Z Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era. Lee, JW; Li, YM

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