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Showing items 1-10 of 14 (2 Page(s) Totally) 1 2 > >> View [10|25|50] records per page
國立交通大學 |
2018-08-21T05:54:15Z |
A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-Assist
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Wu, Shang-Lin; Li, Kuang-Yu; Huang, Po-Tsang; Hwang, Wei; Tu, Ming-Hsien; Lung, Sheng-Chi; Peng, Wei-Sheng; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te |
國立交通大學 |
2017-04-21T06:55:34Z |
A 0.35 V, 375 kHz, 5.43 mu W, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line
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Wu, Shang-Lin; Lu, Chien-Yu; Tu, Ming-Hsien; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te |
國立交通大學 |
2015-07-21T08:29:40Z |
A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist
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Lu, Chien-Yu; Chuang, Ching-Te; Jou, Shyh-Jye; Tu, Ming-Hsien; Wu, Ya-Ping; Huang, Chung-Ping; Kan, Paul-Sen; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin |
國立交通大學 |
2014-12-16T06:14:56Z |
SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor
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CHUANG Ching-Te; Jou Shyh-Jye; Hwang Wei; Lin Yi-Wei; Tsai Ming-Chien; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
國立交通大學 |
2014-12-16T06:14:56Z |
Oscillator based on a 6T SRAM for measuring the Bias Temperature Instability
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Chuang Ching-Te; Jou Shyh-Jye; Hwang Wei; Tsai Ming-Chien; Lin Yi-Wei; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
國立交通大學 |
2014-12-16T06:13:57Z |
Threshold voltage measurement device
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Chuang Ching-Te; Jou Shyh-Jye; Lin Geng-Cing; Wang Shao-Cheng; Lin Yi-Wei; Tsai Ming-Chien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di; Chu Jyun-Kai |
國立交通大學 |
2014-12-16T06:13:49Z |
Oscillato based on a 6T SRAM for measuring the bias temperature instability
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Chuang Ching-Te; Jou Shyh-Jye; Hwang Wei; Tsai Ming-Chien; Lin Yi-Wei; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
國立交通大學 |
2014-12-08T15:35:45Z |
A 40nm 1.0Mb Pipeline 6T SRAM with Variation-Tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist
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Chang, Chi-Shin; Yang, Hao-I; Liao, Wei-Nan; Lin, Yi-Wei; Lien, Nan-Chun; Chen, Chien-Hen; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Tu, Ming-Hsien; Huang, Huan-Shun; Hu, Yong-Jyun; Kan, Paul-Sen; Cheng, Cheng-Yo; Wang, Wei-Chang; Wang, Jian-Hao; Lee, Kuen-Di; Chen, Chia-Cheng; Shih, Wei-Chiang |
國立交通大學 |
2014-12-08T15:30:06Z |
High-Performance 0.6V V-MIN 55nm 1.0Mb 6T SRAM with Adaptive BL Bleeder
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Yang, Hao-I; Lin, Yi-Wei; Hsia, Mao-Chih; Lin, Geng-Cing; Chang, Chi-Shin; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang |
國立交通大學 |
2014-12-08T15:30:06Z |
An All-Digital Bit Transistor Characterization Scheme for CMOS 6T SRAM Array
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Lin, Geng-Cing; Wang, Shao-Cheng; Lin, Yi-Wei; Tsai, Ming-Chien; Chuang, Ching-Te; Jou, Shyh-Jye; Lien, Nan-Chun; Shih, Wei-Chiang; Lee, Kuen-Di; Chu, Jyun-Kai |
Showing items 1-10 of 14 (2 Page(s) Totally) 1 2 > >> View [10|25|50] records per page
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