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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立成功大學 |
2007-06-25 |
Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
|
Sheu, Jinn-Kong; Lu, Y. S.; Lee, Min-Lum; Lai, Wei-Chi; Kuo, C. H.; Tun, Chun-Ju |
| 國立成功大學 |
2007 |
Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering
|
Sheu, Jinn-Kong; Shu, K. W.; Lee, Min-Lum; Tun, Chun-Ju; Chi, Gou-Chung |
| 國立成功大學 |
2007 |
GaN-based ultraviolet p-i-n photodiodes with buried p-layer structure grown by MOVPE
|
Lee, Min-Lum; Sheu, Jinn-Kong |
| 國立成功大學 |
2006-10-30 |
Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring
|
Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Tun, Chun-Ju; Chi, Gou-Chung |
| 國立成功大學 |
2006-05-15 |
Planar GaN p-i-n photodiodes with n(+)-conductive channel formed by Si implantation
|
Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Kao, C. J.; Chi, Gou-Chung |
| 國立成功大學 |
2006-01-23 |
Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
|
Sheu, Jinn-Kong; Lee, Min-Lum; Tun, Chun-Ju; Lin, S. W. |
| 國立成功大學 |
2006-01-16 |
Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
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Lee, Min-Lum; Sheu, Jinn-Kong; Lin, S. W. |
| 國立成功大學 |
2006-01 |
Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer
|
Tun, Chun-Ju; Sheu, Jinn-Kong; Pong, Bao-Jen; Lee, Min-Lum; Lee, Ming-Yu; Hsieh, Cheng-Kang; Hu, Ching-Chung; Chi, Gou-Chung |
| 國立成功大學 |
2006 |
Planar ultraviolet photodetectors formed by Si implantation into p-GaN
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Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Kao, C. J.; Tun, Chun-Ju; Chi, Gou-Chung |
| 國立成功大學 |
2006 |
Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride
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Tun, Chun-Ju; Sheu, Jinn-Kong; Lee, Min-Lum; Hu, Ching-Chung; Hsieh, Cheng-Kang; Chi, Gou-Chung |
| 國立成功大學 |
2005-09-15 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors
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Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, Gou-Chung; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Min-Lum; Ren, F.; Pearton, S. J. |
| 國立成功大學 |
2005-08-01 |
Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
|
Sheu, Jinn-Kong; Lee, Min-Lum; Lai, Wei-Chi; Tseng, H. C.; Chi, Gou-Chung |
| 國立成功大學 |
2005-07-25 |
Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure
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Sheu, Jinn-Kong; Lee, Min-Lum; Lai, Wei-Chi |
| 國立成功大學 |
2005-01-31 |
Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
|
Sheu, Jinn-Kong; Lee, Min-Lum; Lai, Wei-Chi |
| 國立成功大學 |
2005 |
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase
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Sheu, Jinn-Kong; Chen, S. S.; Lee, Min-Lum; Lai, Wei-Chih; Chi, Gou-Chung |
| 國立成功大學 |
2004-08-23 |
Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors
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Kao, C. J.; Sheu, Jinn-Kong; Lai, Wei-Chi; Lee, Min-Lum; Chen, M. C.; Chi, Gou-Chung |
Showing items 1-16 of 16 (1 Page(s) Totally)
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