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| 國立成功大學 |
2011-07-04 |
Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration
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Yang, Chih-Ciao; Jang, C. H.; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Huang, Feng-Wen; Yeh, Yu-Hsiang; Lai, Wei-Chih |
| 國立成功大學 |
2011 |
Characteristics of InGaNsapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
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Yang, Chih-Ciao; Sheu, Jinn-Kong; Huanga, Min-Shun; Tua, Shang-Ju; Huanga, Feng-Wen; Changa, Kuo-Hua; Lee, Ming-Lun; Lai, Wei-Chih |
| 國立成功大學 |
2011 |
Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling
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Hsu, Che-Kang; Sheu, Jinn-Kong; Wang, Jia-Kuen; Lee, Ming-Lun; Chang, Kuo-Hua; Tu, Shang-Ju; Lai, Wei-Chih |
| 國立成功大學 |
2009-03 |
Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers
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Sheu, Jinn-Kong; Yang, Chih-Ciao; Tu, Shang-Ju; Chang, Kuo-Hua; Lee, Ming-Lun; Lai, Wei-Chih; Peng, Li-Chi |
| 國立成功大學 |
2016-03 |
Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes
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Shih, Ya-Hsuan; Chang, Jih-Yuan; Sheu, Jinn-Kong; Kuo, Yen-Kuang; Chen, Fang-Ming; Lee, Ming-Lun; Lai, Wei-Chih |
| 南台科技大學 |
2022-05 |
Efects of FeOOH Nanoflms on Photoelectrochemical Reaction Using Gallium Nitride as Photoelectrodes
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Yao, Yu-Tsun; Kogularasu, Sakthivel; Sun, Wei-Hao; Huang, Ting-Wei; Lee, Ming-Lun; Sheu, Jinn-Kong |
| 國立成功大學 |
2006-04 |
Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes
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Shei, Shih-Chang; Sheu, Jinn-Kong; Tsai, Chi-Ming; Lai, Wei-Chi; Lee, Ming-Lun; Kuo, Cheng-Huang |
| 國立成功大學 |
2011-06-20 |
Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells
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Tu, Shang-Ju; Sheu, Jinn-Kong; Lee, Ming-Lun; Yang, Chih-Ciao; Chang, Kuo-Hua; Yeh, Yu-Hsiang; Huang, Feng-Wen; Lai, Wei-Chih |
| 國立成功大學 |
2010 |
Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
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Hsu, Che-Kang;Sheu, Jinn-Kong;Wang, Jia-Kuen;Lee, Ming-Lun;Chang, Kuo-Hua;Tu, Shang-Ju;Lai, Wei-Chih |
| 國立臺灣海洋大學 |
2011 |
Fast Remote User Authentication Scheme with Smart Card Based on Quadratic Residue
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Wu, Tzong-Sun;Lin, Han-Yu;Lee, Ming-Lun;Chen, Won-Yi |
| 國立成功大學 |
2008-11 |
Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for improving Light Extraction Efficiency
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Sheu, Jinn-Kong; Lee, Ming-Lun; Lu, Y. S.; Shu, K. W. |
| 國立成功大學 |
2012-10-08 |
Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate
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Sheu, Jinn-Kong; Tu, Shang-Ju; Yeh, Yu-Hsiang; Lee, Ming-Lun; Lai, Wei-Chih |
| 國立成功大學 |
2013-09 |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
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Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong |
| 臺大學術典藏 |
2018-09-10T09:43:44Z |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
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Chi, Kai-Lun;Yeh, Shu-Ting;Yeh, Yu-Hsiang;Lin, Kun-Yan;Shi, Jin-Wei;Wu, Yuh-Renn;Lee, Ming Lun;Sheu, Jinn-Kong; Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
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Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 國立成功大學 |
2015-04-06 |
GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure
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Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun |
| 國立成功大學 |
2016-03 |
GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling
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Chen, Fu-Bang; Sheu, Jinn-Kong; Yen, Wei-Yu; Wang, Yen-Chin; Huang, Shih-Hsien; Liu, Chun-Nan; Yeh, Yu-Hsiang; Chang, Chih-Chiang; Lee, Ming-Lun |
| 國立成功大學 |
2011-06-20 |
High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer
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Lee, Ming-Lun; Mue, T. S.; Huang, F. W.; Yang, J. H.; Sheu, J. K. |
| 國立成功大學 |
2013-08-05 |
Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer
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Sheu, Jinn-Kong; Huang, Feng-Wen; Lee, Chia-Hui; Lee, Ming-Lun; Yeh, Yu-Hsiang; Chen, Po-Cheng; Lai, Wei-Chih |
| 國立交通大學 |
2014-12-08T15:23:48Z |
Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps
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Tu, Shang-Ju; Lee, Ming-Lun; Yeh, Yu-Hsiang; Huang, Feng-Wen; Chen, Po-Cheng; Lai, Wei-Chih; Chen, Chung-Wei; Chi, Gou Chung; Sheu, Jinn-Kong |
| 國立成功大學 |
2012-08 |
Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps
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Tu, Shang-Ju; Lee, Ming-Lun; Yeh, Yu-Hsiang; Huang, Feng-Wen; Chen, Po-Cheng; Lai, Wei-Chih; Chen, Chung-Wei; Chi, Gou Chung; Sheu, Jinn-Kong |
| 國立交通大學 |
2015-07-21T11:21:13Z |
Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
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You, Yao-Hong; Su, Vin-Cent; Ho, Ti-En; Lin, Bo-Wen; Lee, Ming-Lun; Das, Atanu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming |
| 國立成功大學 |
2013-12 |
InGaN Flip-Chip Light-Emitting Diodes With Embedded Air Voids as Light-Scattering Layer
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Yeh, Yu-Hsiang; Sheu, Jinn-Kong; Lee, Ming-Lun; Chen, Po-Cheng; Yang, Yu-Chen; Yen, Cheng-Hsiung; Lai, Wei-Chih |
| 南台科技大學 |
2022-06 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
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Lee, Ming- Lun; Tu, Shang-Ju; Sheu, Jinn-Kong |
| 國立成功大學 |
2011-02 |
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique
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Shi, Jin-Wei; Huang, H-W; Kuo, F-M; Lai, W-C; Lee, Ming-Lun; Sheu, Jinn-Kong |
Showing items 1-25 of 54 (3 Page(s) Totally)
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