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机构 日期 题名 作者
臺大學術典藏 2020-06-11T06:22:53Z Improved process for liquid phase deposition of silicon dioxide Chou, J.-S.;Lee, S.-C.; Chou, J.-S.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:53Z Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature Liao, W.-S.;Lin, C.-H.;Lee, S.-C.; Liao, W.-S.; Lin, C.-H.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:52Z Resonant tunneling of X-band electrons from AlAs through GaAs/AlAs/GaAs double barrier structure Shieh, T.-H.;Lee, S.-C.; Shieh, T.-H.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:52Z InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition Liu, B.-D.;Lee, S.-C.;Liu, K.-C.;Sun, T.-P.;Yang, S.-J.; Liu, B.-D.; Lee, S.-C.; Liu, K.-C.; Sun, T.-P.; Yang, S.-J.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:52Z Observation of deep donor center related tunneling peak in the Al xGa1-xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (0.40?x?0.50) resonant tunneling diodes Shieh, T.-H.;Lee, S.-C.; Shieh, T.-H.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:52Z Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor Jan, Y.-H.;Lee, S.-C.; Jan, Y.-H.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:51Z AIGaAs/GaAs Surface Emitting Laser Diode with Curved Reflector Yih, S.-J.;Lee, S.-C.; Yih, S.-J.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:51Z New model for the Staebler-Wronski effect in an amorphous silicon hydrogen alloy Tzeng, W.-J.;Lee, S.-C.; Tzeng, W.-J.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:49Z Enhanced early immune response of leptospiral outer membrane protein LipL32 stimulated by narrow band mid-infrared exposure Hong, C.-H.;Tang, M.-R.;Hsu, S.-H.;Yang, C.-H.;Tseng, C.-S.;Ko, Y.-C.;Guo, C.-S.;Yang, C.-W.;Lee, S.-C.; Hong, C.-H.; Tang, M.-R.; Hsu, S.-H.; Yang, C.-H.; Tseng, C.-S.; Ko, Y.-C.; Guo, C.-S.; Yang, C.-W.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:22:48Z A method to tune the island size and improve the uniformity for the in situ formation of InGaAs quantum dots on GaAs Chang, S.-Z.;Chang, T.-C.;Lee, S.-C.; Chang, S.-Z.; Chang, T.-C.; Lee, S.-C.; SI-CHEN LEE

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