|
"lee s c"的相关文件
显示项目 256-265 / 637 (共64页) << < 21 22 23 24 25 26 27 28 29 30 > >> 每页显示[10|25|50]项目
| 臺大學術典藏 |
2020-06-11T06:23:04Z |
Morphologies and photoluminescence of porous silicon under different etching and oxidation conditions
|
Lin, C.-H.;Lee, S.-C.;Chen, Y.-F.; Lin, C.-H.; Lee, S.-C.; Chen, Y.-F.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:04Z |
Dislocation generation mechanisms of In x Ga 1-x As (0?x?1) epilayers grown on (100) InP substrates by molecular beam epitaxy
|
Lee, S.-C.; Chen, C.R.; Chen, L.J.; SI-CHEN LEE; Chang, S.-Z.;Lee, S.-C.;Chen, C.R.;Chen, L.J.; Chang, S.-Z. |
| 臺大學術典藏 |
2020-06-11T06:23:04Z |
Electrical and optical properties of implanted amorphous silicon
|
Wei, J.-H.;Lee, S.-C.; Wei, J.-H.; Lee, S.-C.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:03Z |
High-performance metal/SiO 2 /InSb capacitor fabricated by photoenhanced chemical vapor deposition
|
Sun, T.-P.;Lee, S.-C.;Liu, K.-C.;Pang, Y.-M.;Yang, S.-J.; Sun, T.-P.; Lee, S.-C.; Liu, K.-C.; Pang, Y.-M.; Yang, S.-J.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:03Z |
The growth of highly mismatched In x Ga 1-x As (0.28?x?1) on GaAs by molecular-beam epitaxy
|
Chang, S.-Z.;Chang, T.-C.;Lee, S.-C.; Chang, S.-Z.; Chang, T.-C.; Lee, S.-C.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:03Z |
Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors
|
Wu, C.-C.;Ting, J.-L.;Lee, S.-C.;Lin, H.-H.; Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:03Z |
Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy
|
SI-CHEN LEE; Wang, W.-S.; Lee, S.-C.; Lin, H.-H.; Wang, C.-K.; Chen, J.-A.; Chen, J.-A.;Wang, C.-K.;Lin, H.-H.;Wang, W.-S.;Lee, S.-C. |
| 臺大學術典藏 |
2020-06-11T06:23:02Z |
Degradation and annealing characteristics of amorphous silicon-hydrogen alloys after a long-time test
|
Tzeng, W.-J.;Tsai, H.-K.;Lee, S.-C.; Tzeng, W.-J.; Tsai, H.-K.; Lee, S.-C.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:02Z |
Abrupt heterointerfaces in Al 0.35 Ga 0.65 As/Al 0.05 Ga 0.95 As/Al 0.35 Ga 0.65 As quantum well structure grown by liquid-phase epitaxy
|
Chen, J.-A.;Lee, J.-H.;Lee, S.-C.;Lin, H.-H.; Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:23:02Z |
The current leakage mechanism in InSb p + n diodes
|
Sun, T.-P.;Lee, S.-C.;Yang, S.-J.; Sun, T.-P.; Lee, S.-C.; Yang, S.-J.; SI-CHEN LEE |
显示项目 256-265 / 637 (共64页) << < 21 22 23 24 25 26 27 28 29 30 > >> 每页显示[10|25|50]项目
|