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Showing items 1-9 of 9  (1 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 1996-04 An unified GSMBE growth model for GaInAsP on InP and GaAs Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung
臺大學術典藏 1996-04 An unified GSMBE growth model for GaInAsP on InP and GaAs Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung
國立臺灣大學 1996 Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy Lee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung
國立臺灣大學 1995-05 The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
臺大學術典藏 1995-05 The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
國立臺灣大學 1995 Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung
國立臺灣大學 1995 The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung
臺大學術典藏 1995 Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung
臺大學術典藏 1995 The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung

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