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Showing items 26-35 of 82  (9 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:42:24Z Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence Huang, HY; Chuang, CH; Shu, CK; Pan, YC; Lee, WH; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:41:51Z Microstructure characteristics for anorthite composite glass with nucleating agents of TiO2 under non-isothermal crystallization Lo, CL; Duh, JG; Chiou, BS; Lee, WH
國立交通大學 2014-12-08T15:41:17Z Growth temperature reduction for isoelectronic As-doped GaN Lee, WH; Huang, HY; Chen, WC; Lee, CF; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:39:43Z Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite liner Lan, JK; Wang, YL; Liu, CP; Lee, WH; Ay, C; Cheng, YL; Chang, SC
國立交通大學 2014-12-08T15:39:33Z Effect of glass additions on the sintering behaviors and electrical microwave properties of BaO-Nd2O3-Sm2O3-TiO2 ceramics Chang, LC; Chiou, BS; Lee, WH
國立交通大學 2014-12-08T15:27:23Z Low temperature deposited highly-conductive N-type SiC thin films Cheng, KL; Cheng, HC; Lee, WH; Lee, C; Yew, TR
國立交通大學 2014-12-08T15:27:16Z The effects of isoelectronic in-doping in GaN films grown by MOCVD Shu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:27:05Z The electronic structure and optical properties of phosphorus implanted GaN films Shu, CK; Lee, WH; Huang, HY; Chuang, CH; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:27:01Z Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC
國立交通大學 2014-12-08T15:26:59Z Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy Shu, CK; Lee, WH; Pan, YC; Huang, HY; Chen, HH; Chen, WH; Chen, WK; Lee, MC

Showing items 26-35 of 82  (9 Page(s) Totally)
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