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Showing items 1-25 of 44  (2 Page(s) Totally)
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Institution Date Title Author
國家衛生研究院 2023-02 Lymphocyte disturbance and functional assessment of the [Asp521Asn] ZAP70 mutation Lin, YF;Lee, WI;Ho, CH;Chen, SH;Hsu, MH;Wu, RC;Lee, WF;Jaing, TH;Huang, JL;Tsai, SF
國立交通大學 2019-04-02T05:59:34Z Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxy Chen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A
國立交通大學 2019-04-02T05:59:14Z EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY LEE, WI; HUANG, TC; GUO, JD; FENG, MS
國立交通大學 2019-04-02T05:58:33Z Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopy Wang, YP; Lee, WI; Tseng, TY
國立交通大學 2019-04-02T05:58:30Z Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS
國立交通大學 2019-04-02T05:58:23Z Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic Lee, WI; Young, RL; Chen, WK
國家衛生研究院 2017-09 Novel mutations of the tetratricopeptide repeat domain 7A gene and phenotype/genotype comparison Lien, R;Lin, YF;Lai, MW;Weng, HY;Wu, RC;Jaing, TH;Huang, JL;Tsai, SF;Lee, WI
國立交通大學 2014-12-08T15:49:09Z Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy Su, ZA; Huang, JH; Hsieh, LZ; Lee, WI
國立交通大學 2014-12-08T15:49:08Z Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy Su, ZA; Huang, JH; Lee, WI
國立交通大學 2014-12-08T15:49:06Z Outlook for photovoltaic developments in Taiwan Hwang, HL; Hsu, KYJ; Lee, WI; Shing, YH; Hsu, KC; Tseng, BH
國立交通大學 2014-12-08T15:47:04Z Majority- and minority-carrier traps in Te-doped AlInP Wu, YR; Sung, WJ; Lee, WI
國立交通大學 2014-12-08T15:46:27Z Mg-related deep levels in AlInP Wu, YR; Sung, WJ; Lee, SC; Li, TJ; Lee, WI
國立交通大學 2014-12-08T15:46:21Z A dopant-related defect in Te-doped AlInP Wu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI
國立交通大學 2014-12-08T15:45:20Z Ga0.5In0.5P barrier layer for wet oxidation of AlAs Lee, SC; Lee, WI
國立交通大學 2014-12-08T15:45:12Z Phosphorus vacancy as a deep level in AlInP layers Sung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI
國立交通大學 2014-12-08T15:44:07Z Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen, TC; Lee, WI; Sheu, JK; Chi, GC
國立交通大學 2014-12-08T15:43:50Z Activation of p-type GaN in a pure oxygen ambient Wen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS
國立交通大學 2014-12-08T15:43:27Z Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well Wen, TC; Lee, WI
國立交通大學 2014-12-08T15:43:06Z Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures Lu, CR; Lee, JR; Chen, YY; Lee, WI; Lee, SC
國立交通大學 2014-12-08T15:42:33Z Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen, TC; Lee, WI; Sheu, JK; Chi, GC
國立交通大學 2014-12-08T15:41:11Z Thermal stability of plasma-treated ohmic contacts to n-GaN Lee, CC; Lin, SD; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT
國立交通大學 2014-12-08T15:41:01Z Liquid phase deposited SiO2 on GaN Wu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI
國立交通大學 2014-12-08T15:40:40Z Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments Lee, CC; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT
國立交通大學 2014-12-08T15:40:37Z Electrooptical properties of GaNAs/GaAs multiple quantum well structures Lee, JR; Chen, YY; Lu, CR; Lee, WI; Lee, SC
國立交通大學 2014-12-08T15:36:55Z Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance Lee, JR; Lu, CR; Lee, WI; Lee, SC

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