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"lee y j"的相关文件
显示项目 326-335 / 592 (共60页)
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| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)
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Lee, Y.J.;Lee, W.C.;Huang, M.L.;Wu, S.Y.;Nieh, C.W.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As
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Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Nanometer-thick single-crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology
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Chang, W.H.;Lee, C.H.;Chang, Y.C.;Chang, P.;Huang, M.L.;Lee, Y.J.;Hsu, C.-H.;Hong, J.M.;Tsai, C.C.;Kwo, J.R.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers
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Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Al2O3/Ga2O3(Gd 2O3) passivation on In0.20Ga 0.80As/GaAs - Structural intactness with high-temperature annealing
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Lee, Y.J.;Lee, C.H.;Tung, L.T.;Chiang, T.H.;Lai, T.Y.;Kwo, J.;Hsu, C.-H.;Hong, M.; Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2
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Chang, P.;Lee, W.C.;Huang, M.L.;Lee, Y.J.;Hong, M.;Kwo, J.; Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Structural characteristics of nanometer thick Gd2O3 films grown on GaN (0001)
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Chang, W.H.;Chang, P.;Lai, T.Y.;Lee, Y.J.;Kwo, J.;Hsu, C.-H.;Hong, M.; Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
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Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
The growth of an epitaxial ZnO film on Si(111) with a Gd2O 3(Ga2O3) buffer layer
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Lin, B.H.;Liu, W.R.;Yang, S.;Kuo, C.C.;Hsu, C.-H.;Hsieh, W.F.;Lee, W.C.;Lee, Y.J.;Hong, M.;Kwo, J.; Lin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
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Chang, Y.C.;Huang, M.L.;Chang, Y.H.;Lee, Y.J.;Chiu, H.C.;Kwo, J.;Hong, M.; Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
显示项目 326-335 / 592 (共60页)
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