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| 國立成功大學 |
2020 |
3D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers
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Su, C.J.;Huang, M.K.;Lee, K.S.;Hu, V.P.H.;Huang, Y.F.;Zheng, B.C.;Yao, C.H.;Lin, N.C.;Kao, Kao K.H.;Hong, T.C.;Sung, P.J.;Wu, C.T.;Yu, T.Y.;Lin, K.L.;Tseng, Y.C.;Lin, C.L.;Lee, Y.J.;Chao, T.S.;Li, J.Y.;Wu, Wu W.F.;Shieh, J.M.;Wang, Y.H.;Yeh, W.K. |
| 國立成功大學 |
2020 |
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K
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De, S.;Baig, M.A.;Qiu, B.-H.;Lu, D.;Sung, P.-J.;Hsueh, F.K.;Lee, Y.-J.;Su, C.-J. |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
MBE-grown high 庥 gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics
|
Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:49Z |
Thermodynamic stability of Ga 2 O 3 (Gd 2 O 3 ) GaAs interface
|
Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
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Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics
|
Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Structure of HfO2films epitaxially grown on GaAs (001)
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Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures
|
MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing
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Chen, C.P.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG; Lay, T.S.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y. |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
A novel approach of using a MBE template for ALD growth of high-庥 dielectrics
|
Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
MBE grown high 庥 dielectrics Ga2O3(Gd2O3) on GaN
|
Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O2 films
|
Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN
|
Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering
|
Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics
|
You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
|
Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:42Z |
Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters
|
Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:42Z |
Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection
|
Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:41Z |
Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures
|
Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:41Z |
Growth and structural characteristics of GaN/AIN/nanothick 帠-Al 2O3/Si(111)
|
Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:41Z |
Transmission electron microscopy characterization of HfO 2/GaAs(001) heterostructures grown by molecular beam epitaxy
|
Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:40Z |
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As
|
MINGHWEI HONG; Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J. |
| 臺大學術典藏 |
2019-12-27T07:49:40Z |
Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition
|
Pan, C.H.;Kwo, J.;Lee, K.Y.;Lee, W.C.;Chu, L.K.;Huang, M.L.;Lee, Y.J.;Hong, M.; Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Achieving a low interfacial density of states in atomic layer deposited Al2 O3 on In0.53 Ga0.47 As
|
Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric
|
Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:38Z |
High 庥 dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties
|
Chang, W.H.;Lee, C.H.;Chang, P.;Chang, Y.C.;Lee, Y.J.;Kwo, J.;Tsai, C.C.;Hong, J.M.;Hsu, C.-H.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:38Z |
Domain matching epitaxial growth of high-quality ZnO film using a Y 2O3 buffer layer on Si (111)
|
Liu, W.-R.;Li, Y.-H.;Hsieh, W.F.;Hsu, C.-H.;Lee, W.C.;Lee, Y.J.;Hong, M.;Kwo, J.; Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy
|
Lee, W.C.;Lee, Y.J.;Kwo, J.;Hsu, C.H.;Lee, C.H.;Wu, S.Y.;Ng, H.M.;Hong, M.; Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge
|
Chu, L.K.;Lee, W.C.;Huang, M.L.;Chang, Y.H.;Tung, L.T.;Chang, C.C.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
Molecular beam epitaxy-grown Al2O3/HfO2 high-庥 dielectrics for germanium
|
Lee, W.C.;Chin, B.H.;Chu, L.K.;Lin, T.D.;Lee, Y.J.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.; Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS
|
Lin, T.D.;Chang, P.;Chiu, H.C.;Chang, Y.C.;Lin, C.A.;Chang, W.H.;Lee, Y.J.;Chang, Y.H.;Huang, M.L.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
Advances on III-V MOSFET for science and technology beyond Si CMOS
|
Kwo, J.;Lin, T.D.;Huang, M.L.;Chang, P.;Lee, Y.J.;Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)
|
Lee, Y.J.;Lee, W.C.;Huang, M.L.;Wu, S.Y.;Nieh, C.W.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As
|
Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Nanometer-thick single-crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology
|
Chang, W.H.;Lee, C.H.;Chang, Y.C.;Chang, P.;Huang, M.L.;Lee, Y.J.;Hsu, C.-H.;Hong, J.M.;Tsai, C.C.;Kwo, J.R.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers
|
Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Al2O3/Ga2O3(Gd 2O3) passivation on In0.20Ga 0.80As/GaAs - Structural intactness with high-temperature annealing
|
Lee, Y.J.;Lee, C.H.;Tung, L.T.;Chiang, T.H.;Lai, T.Y.;Kwo, J.;Hsu, C.-H.;Hong, M.; Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2
|
Chang, P.;Lee, W.C.;Huang, M.L.;Lee, Y.J.;Hong, M.;Kwo, J.; Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Structural characteristics of nanometer thick Gd2O3 films grown on GaN (0001)
|
Chang, W.H.;Chang, P.;Lai, T.Y.;Lee, Y.J.;Kwo, J.;Hsu, C.-H.;Hong, M.; Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
|
Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
The growth of an epitaxial ZnO film on Si(111) with a Gd2O 3(Ga2O3) buffer layer
|
Lin, B.H.;Liu, W.R.;Yang, S.;Kuo, C.C.;Hsu, C.-H.;Hsieh, W.F.;Lee, W.C.;Lee, Y.J.;Hong, M.;Kwo, J.; Lin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
|
Chang, Y.C.;Huang, M.L.;Chang, Y.H.;Lee, Y.J.;Chiu, H.C.;Kwo, J.;Hong, M.; Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd2O3 and Y2O3 on GaN
|
Chang, P.; Hsu, C.-H.; Huang, T.-S.; Kwo, J.R.; Hong, M.; MINGHWEI HONG; Lee, Y.-J.; Chang, W.-H.;Wu, S.-Y.;Lee, C.-H.;Lai, T.-Y.;Lee, Y.-J.;Chang, P.;Hsu, C.-H.;Huang, T.-S.;Kwo, J.R.;Hong, M.; Chang, W.-H.; Wu, S.-Y.; Lee, C.-H.; Lai, T.-Y. |
| 臺大學術典藏 |
2019-12-27T06:47:23Z |
Observation of B + ? ?K +
|
Lee, Y.-J.; Lee, Y.-J.; WEI-SHU HOU et al. |
| 臺大學術典藏 |
2019-12-27T06:47:10Z |
Observation of B+→pΛ?γ
|
Lee, Y.-J.; Lee, Y.-J.; KAI-FENG CHEN; WEI-SHU HOU et al. |
| 臺大學術典藏 |
2019-12-27T06:46:38Z |
Search for B0→pp?, ΛΛ? and B+→pΛ? at Belle
|
Tsai, Y.-T.; Chang, P.; Abe, K.; Adachi, I.; Aihara, H.; Anipko, D.; Bakich, A.M.; Bitenc, U.; Bizjak, I.; Blyth, S.; Bra?ko, M.; Browder, T.E.; Chang, M.-C.; Chao, Y.; Chen, A.; Chen, W.T.; Cheon, B.G.; Chistov, R.; Choi, Y.; Cole, S.; Dalseno, J.; Danilov, M.; Dash, M.; Dragic, J.; Drutskoy, A.; Eidelman, S.; Fratina, S.; Gabyshev, N.; Ha, H.; Haba, J.; Hayashii, H.; Hazumi, M.; Heffernan, D.; Hoshi, Y.; Hou, W.-S.; Hsiung, Y.B.; Iijima, T.; Ikado, K.; Inami, K.; Ishikawa, A.; Itoh, R.; Iwasaki, M.; Iwasaki, Y.; Kang, J.H.; Kawai, H.; Kichimi, H.; Kim, H.J.; Kim, H.O.; Kinoshita, K.; Korpar, S.; Kri?an, P.; Krokovny, P.; Kulasiri, R.; Kumar, R.; Kuo, C.C.; Kuzmin, A.; Kwon, Y.-J.; Lee, M.J.; Lee, Y.-J.; Lesiak, T.; Limosani, A.; Lin, S.-W.; Liventsev, D.; Matsumoto, T.; McOnie, S.; Medvedeva, T.; Mitaroff, W.; Miyata, H.; Miyazaki, Y.; Moloney, G.R.; Nakano, E.; Nakao, M.; Natkaniec, Z.; Nishida, S.; Nitoh, O.; Ogawa, S.; Ohshima, T.; Okuno, S.; Onuki, Y.; Ozaki, H.; Pakhlov, P.; Pakhlova, G.; Piilonen, L.E.; Sakai, Y.; Satoyama, N.; Schietinger, T.; Schneider, O.; Sch?mann, J.; Senyo, K.; Sevior, M.E.; Shapkin, M.; Shibuya, H.; Singh, J.B.; Somov, A.; Stari?, M.; Stoeck, H.; Sumiyoshi, T.; Takasaki, F.; Tanaka, M.; Taylor, G.N.; Teramoto, Y.; Tian, X.C.; Tikhomirov, I.; Uehara, S.; Ueno, K.; Unno, Y.; Uno, S.; Urquijo, P.; Varner, G.; Varvell, K.E.; Villa, S.; Vinokurova, A.; Wang, C.H.; Wang, M.-Z.; Watanabe, Y.; Won, E.; Yamaguchi, A.; Yamashita, Y.; Yamauchi, M.; Zhilich, V.; Zhulanov, V.; Zupanc, A.; Tsai, Y.-T.; WEI-SHU HOU et al. |
| 臺大學術典藏 |
2019-12-27T06:46:35Z |
Study of B+→pΛ?γ, pΛ?π0 and B0→pΛ?π-
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Wang, M.-Z.; Lee, Y.-J.; Abe, K.; Adachi, I.; Aihara, H.; Anipko, D.; Aushev, T.; Bahinipati, S.; Bakich, A.M.; Bedny, I.; Belous, K.; Bizjak, I.; Blyth, S.; Bondar, A.; Bra?ko, M.; Browder, T.E.; Chang, M.-C.; Chao, Y.; Chen, A.; Chen, K.-F.; Chen, W.T.; Cheon, B.G.; Chistov, R.; Cho, I.-S.; Choi, Y.; Choi, Y.K.; Cole, S.; Dalseno, J.; Dash, M.; Eidelman, S.; Fratina, S.; Gokhroo, G.; Ha, H.; Haba, J.; Hayasaka, K.; Hazumi, M.; Heffernan, D.; Hokuue, T.; Hoshi, Y.; Hou, W.-S.; Hsiung, Y.B.; Hyun, H.J.; Iijima, T.; Ikado, K.; Imoto, A.; Inami, K.; Ishikawa, A.; Itoh, R.; Iwasaki, M.; Iwasaki, Y.; Joshi, N.; Kah, D.H.; Kang, J.H.; Katayama, N.; Kawasaki, T.; Kichimi, H.; Kim, Y.J.; Kinoshita, K.; Kri?an, P.; Krokovny, P.; Kumar, R.; Kuo, C.C.; Kwon, Y.-J.; Lee, J.S.; Lee, M.J.; Lee, S.E.; Lesiak, T.; Lin, S.-W.; Liventsev, D.; Mandl, F.; Matsumoto, T.; McOnie, S.; Medvedeva, T.; Mitaroff, W.; Miyake, H.; Miyata, H.; Miyazaki, Y.; Mizuk, R.; Moloney, G.R.; Nakao, M.; Nishida, S.; Nitoh, O.; Ohshima, T.; Okuno, S.; Onuki, Y.; Ostrowicz, W.; Ozaki, H.; Pakhlov, P.; Pakhlova, G.; Palka, H.; Park, C.W.; Park, H.; Park, K.S.; Pestotnik, R.; Piilonen, L.E.; Sakai, Y.; Satoyama, N.; Schneider, O.; Sch?mann, J.; Schwartz, A.J.; Senyo, K.; Shapkin, M.; Shibuya, H.; Shwartz, B.; Sokolov, A.; Somov, A.; Soni, N.; Stari?, M.; Stoeck, H.; Sumiyoshi, T.; Takasaki, F.; Tamai, K.; Tanaka, M.; Teramoto, Y.; Tian, X.C.; Tsukamoto, T.; Uehara, S.; Ueno, K.; Uglov, T.; Unno, Y.; Uno, S.; Usov, Y.; Varner, G.; Varvell, K.E.; Vervink, K.; Villa, S.; Vinokurova, A.; Wang, C.H.; Wang, P.; Watanabe, Y.; Won, E.; Xie, Q.L.; Yamaguchi, A.; Yamashita, Y.; Zhang, Z.P.; Zhilich, V.; Zhulanov, V.; Zupanc, A.; Wang, M.-Z.; KAI-FENG CHEN; WEI-SHU HOU et al. |
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