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"lee yj"的相关文件
显示项目 26-75 / 228 (共5页)
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| 中山醫學大學 |
2020 |
Alternative 3 ' splice site selection of intron 5 within the prmt8 gene results in a novel variant widely distributed in vertebrates and specifically abundant in Ayes
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Wang, YC; Chang, CP; Tsai, YJ; Lee, YJ; Li, C |
| 中山醫學大學 |
2020 |
Overexpression of KLF17 Predicts a Favorable Prognosis in Patients with Oral Squamous Cell Carcinoma: A Retrospective Study
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Lee, YJ; Chan, L; Yeh, CM; Lee, CH; Sung, WW |
| 中山醫學大學 |
2020 |
Cilostazol ameliorates diabetic nephropathy by inhibiting high-glucose-induced apoptosis
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Chian, CW; Lee, YS; Lee, YJ; Chen, YH; Wang, CP; Lee, WC; Lee, HJ |
| 中山醫學大學 |
2020 |
Executive summary of the DAROC clinical practice guidelines for diabetes care-2018 Diabetes Association of the Republic of China (Taiwan)
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Chen, JF; Chen, HS; Chu, CH; Chuang, LM; Ho, LT; Hung, YJ; Kuo, CH; Li, HY; Lin, CH; Lin, KD; Lin, SY; Sheen, YJ; Sheu, WHH; Shin, SJ; Tsai, ST; Te Tu, S; Bai, CH; Chang, YC; Chang, TJ; Chang, CH; Chang, CJ; Chao, CC; Chen, CC; Chen, YL; Chong, K; Chuang, WL; Guo, LY; Hsieh, MC; Hsu, CC; Huang, LC; Huang, CN; Huang, YY; Hung, CS; Hung, WW; Hwu, CM; Jeng, JS; Jiang, YD; Juang, JMJ; Juang, JH; Kuo, CS; Kuo, JF; Kwok, CF; Lai, YC; Lee, MY; Lee, YJ; Lee, IT; Lee, CN; Lee, YT; Lee, TI; Lee, CH; Lin, LY; Lin, SD; Lin, KY; Lin, HJ; Lin, CH; Liu, CE; Lo, FS; Lu, CH; Lu, KC; Ma, WY; Ou, HY; Pei, D; Su, CC; Su, SL; Tan, ECH; Tien, KJ; Tsai, LK; Tseng, CH; Wang, JS; Weng, SF; Wu, WC; Yang, MC; Yang, YS; Yang, CH; Yang, WS; Yeh, JT; Yu, NC; Yu, TY |
| 中山醫學大學 |
2020 |
The Her2 gene aberrations in mucinous ovarian carcinoma: Analysis of twenty-one cases
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Chiu, HH; Chao, WR; Chen, CK; Lee, YJ; Lee, MY; Han, CP |
| 中山醫學大學 |
2020 |
Mulberry supplementation reduces lipid deposition and protects hamster retina from oxLDL damage
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Wu, CS; Chung, TJ; Lee, YJ; Hsu, JD; Lee, HJ |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics
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Chang, YC;Huang, ML;Chang, YH;Lee, YJ;Chiu, HC;Kwo, J;Hong, M; Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer
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Lin, BH;Liu, WR;Yang, S;Kuo, CC;Hsu, C-H;Hsieh, WF;Lee, WC;Lee, YJ;Hong, M;Kwo, J; Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Room temperature ferromagnetism in cluster free, Co doped Y2 O 3 dilute magnetic oxide
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Wu, CN;Huang, SY;Lin, WC;Wu, TS;Soo, YL;Lee, WC;Lee, YJ;Chang, YH;Hong, M;Kwo, J; Wu, CN; Huang, SY; Lin, WC; Wu, TS; Soo, YL; Lee, WC; Lee, YJ; Chang, YH; Hong, M; Kwo, J |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As
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Wu, YD;Lin, TD;Chiang, TH;Chang, YC;Chiu, HC;Lee, YJ;Hong, M;Lin, CA;Kwo, J; Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
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Chang, WH;Chang, P;Lai, TY;Lee, YJ;Kwo, J;Hsu, C-H;Hong, M; Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing
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Lee, YJ;Lee, CH;Tung, LT;Chiang, TH;Lai, TY;Kwo, J;Hsu, CH;Hong, M; Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
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Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2
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Chang, P;Lee, WC;Huang, ML;Lee, YJ;Hong, M;Kwo, J; Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)
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Lee, YJ;Lee, WC;Huang, ML;Wu, SY;Nieh, CW;Hong, M;Kwo, J;Hsu, CH; Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
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Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy Study
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Liou, SC;Chu, M-W;Chen, CH;Lee, YJ;Hong, M;Kwo, J; Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge
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Chu, LK;Lee, WC;Huang, ML;Chang, YH;Tung, LT;Chang, CC;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties
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Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
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Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium
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Lee, WC;Chin, BH;Chu, LK;Lin, TD;Lee, YJ;Tung, LT;Lee, CH;Hong, M;Kwo, J; Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Surface exciton polariton in monoclinic HfO2: an electron energy-loss spectroscopy study
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Liou, SC;Chu, MW;Lee, YJ;Hong, M;Kwo, J;Chen, CH; Liou, SC; Chu, MW; Lee, YJ; Hong, M; Kwo, J; Chen, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Advances on III-V MOSFET for Science and Technology beyond Si CMOS
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Kwo, JR;Lin, TD;Huang, ML;Chang, P;Lee, YJ;Hong, M; Kwo, JR; Lin, TD; Huang, ML; Chang, P; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS
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Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As
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Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)
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Liu, W-R; Li, Y-H; Hsieh, WF; Hsu, C-H; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
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Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection
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Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
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Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy
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Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures
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Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics
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Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111)
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Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; Hong, M; Ng, HM; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics
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You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:17Z |
Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate Dielectrics
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You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:17Z |
Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric
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Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures
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Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN
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Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures
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Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; Hong, M; Kwo, J; MINGHWEI HONG; Hsu, YL; Lee, YJ; Chang, YH |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films
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Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering
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Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
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Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface
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Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
MBE and ALD grown High k Dielectrics Gate Stacks on GaN
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Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG |
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